| PART |
Description |
Maker |
| MIE-514H4 514H4 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE 大功率的GaAIAs的T 1 3 / 4包装红外发光二极
Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd.
UOT[Unity Opto Technology]
|
| MIE-534H4 534H4 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE 大功率的GaAIAs的T 1 3 / 4包装红外发光二极
Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd.
UOT[Unity Opto Technology]
|
| MIE-11RG1 11RG1 |
GaAs SIDE LOOK PACKAGE INFRARED EMITTING DIODE 砷化镓角度看包装红外发光二极
Infrared Emitting Diodes (IRED)
|
Unity Opto Technology Co., Ltd.
UOT[Unity Opto Technology]
|
| MIE-404L3 |
GaAlAs HIGH POWER T0-46 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| MIE-544L3 |
GaAlAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| MIE-824L3 |
GaAs HIGH POWER T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| TSAL5100 |
High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
|
Vishay Siliconix
|
| TSAL7200 TSAL720009 |
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
|
Vishay Siliconix
|
| MIE-324A2 |
AlGaAs/GaAs HIGH POWER T-1 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| VSMY7850X011106 |
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology
|
Vishay Siliconix
|
