| PART |
Description |
Maker |
| TBB100211 |
Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
Renesas Electronics Corporation
|
| TBB1002 TBB1002BMTL-E TBB100206 |
Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier
|
Renesas Electronics Corporation
|
| TBB1017 TBB1017SMTL-E |
Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
|
Renesas Electronics Corporation
|
| TBB101006 TBB1010KMTL-E |
Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier
|
Renesas Electronics Corporation
|
| BB501CAS-TL-E |
Built in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Renesas Electronics Corporation
|
| BB304MDW-TL-E BB304M |
Built in Biasing Circuit MOS FET IC VHF RF Amplifier
|
Renesas Electronics Corporation
|
| BB301MAW-TL-E BB301M |
Built in Biasing Circuit MOS FET IC VHF RF Amplifier
|
Renesas Electronics Corporation
|
| BB505M |
Build in Biasing Circuit MOS FET IC
|
Renesas Technology
|
| BB102M |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
|
| BB503M |
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
|
Hitachi Semiconductor
|