| PART |
Description |
Maker |
| SPD4947SM |
1 AMPS 200-1000 VOLTS 150-200 nsec FAST RECOVERY RECTIFIER
|
Solid States Devices, I...
|
| SDR720 SDR705 SDR710 SDR715 |
70 AMP 50-200 VOLTS 50 nsec ULTRA FAST RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| SDR952E SDR951E SDR950E |
60 AMPS 100 - 200 VOLTS 35 nsec HYPER FAST RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| SPD506 SPD502 SPD503 SPD504 SPD505 |
5 AMPS 200 - 600 VOLTS 40 nsec HYPER FAST RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| SDR680 |
80 AMPS 100 - 200 VOLTS 35 nsec HYPER FAST RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| SPD6626 SPD6628BS SPD6628BTX SPD6628BTXV SPD6629BS |
2.8 - 4 AMPS 200 - 1000 VOLTS 30 - 60 nsec HYPER FAST RECOVERY RECTIFIER
|
Solid States Devices, Inc
|
| SDR622CTJ SDR621CTJ SDR620CTJ |
40 AMPS 100 - 200 VOLTS 35 nsec HYPER FAST CENTERTAP RECTIFIER
|
Solid States Devices, Inc.
|
| SDR9102CTP SDR9100CTN SDR9100CTP SDR9101CTN SDR910 |
120 AMP 100- 200 VOLTS 35 nsec HYPER FAST CENTERTAP RECTIFIER
|
SSDI[Solid States Devices, Inc]
|
| MSAFZ15N40A MSAFX14N100A FSE1850 FSE1350 FSE1540 F |
N Channel MOSFET; Package: CoolPack1; trr (nsec): 120; t(on) (nsec): 180; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 300; BVDSS (V): 400; Rq: 0.4; VSD (V): 1.5 SMALL SIGNAL, FET
N Channel MOSFET; Package: CoolPack1; trr (nsec): 850; t(on) (nsec): 60; ID (A): 14; RDS(on) (Ohms): 0.82; PD (W): 310; BVDSS (V): 1000; Rq: 0.25; VGS(th) (V): 4; VSD (V): 1.5 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 35; ID (A): 18; RDS(on) (Ohms): 0.28; PD (W): 150; BVDSS (V): 500; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1200; t(on) (nsec): 27; ID (A): 13; RDS(on) (Ohms): 0.4; PD (W): 125; BVDSS (V): 500; Rq: 1; VSD (V): 1.4 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 35; ID (A): 15; RDS(on) (Ohms): 0.3; PD (W): 125; BVDSS (V): 400; Rq: 1; VSD (V): 1.6 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-258; trr (nsec): 1000; t(on) (nsec): 33; ID (A): 20; RDS(on) (Ohms): 0.21; PD (W): 150; BVDSS (V): 400; Rq: 0.9; VSD (V): 1.8 SMALL SIGNAL, FET
N Channel MOSFET; Package: TO-257; trr (nsec): 660; t(on) (nsec): 17; ID (A): 5; RDS(on) (Ohms): 1; PD (W): 50; BVDSS (V): 400; Rq: 2; VSD (V): 1.6 5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Microsemi, Corp.
|
| VJ648XM |
Single Phase Bridge; Package: SEE_FACTORY; trr (nsec): 200; IO/ Leg (A): 10; VR / Leg (V): 600; IFSM / Leg (A): 80; IR/Leg (µA): 10; VF/leg (V): 1.5;
|
MICROSEMI CORP-COLORADO
|
| PM15CSJ060 |
Intellimod?/a> Module Three Phase IGBT Inverter Output (15 Amperes/600Volts)
Intellimod Module Three Phase IGBT Inverter Output (15 Amperes/600Volts)
Intellimod⑩ Module Three Phase IGBT Inverter Output (15 Amperes/600Volts)
Module Three Phase Brake IGBT Inverter Output
|
POWEREX[Powerex Power Semiconductors]
|
