| PART |
Description |
Maker |
| MMG3007NT112 |
Heterojunction Bipolar Transistor
|
Freescale Semiconductor, Inc
|
| MMG3003NT112 |
Heterojunction Bipolar Transistor Technology
|
Freescale Semiconductor, Inc
|
| MMA20312B MMA20312B-12 |
Heterojunction Bipolar Transistor Technology
|
Freescale Semiconductor...
|
| MT3S113P |
Radio-frequency SiGe Heterojunction Bipolar Transistor
|
Toshiba, Corp.
|
| MMG3012NT1 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
Freescale Semiconductor...
|
| MMG3002NT1 MMG3002NT108 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
Freescale Semiconductor, Inc
|
| MMG3013NT1 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
FREESCALE[Freescale Semiconductor, Inc]
|
| MMG3002NT1 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
MOTOROLA[Motorola, Inc]
|
| MMA20312B |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
Freescale Semiconductor...
|
| IMZ2A |
COMPLEMENTARY DUAL GENERAL PURPOSE AMPLIFIER TRANSIS
|
Pan Jit International Inc.
|