| PART |
Description |
Maker |
| TN6Q04 |
ExPD (Excellent Power Device) Quasi-Resonant Switching Power Supply ExPD
|
Sanyo Semicon Device
|
| TN5D41 |
ExPD (Excellent-Performance Power & RF Device) Separately-Excited Step-Down Switching Regulator (5V Output type)
|
Sanyo Semicon Device
|
| TN8D41A |
ExPD (Excellent-Performance Power & RF Device) Separately-Excited Step-Down Switching Regulator (5V Output type)
|
Sanyo Semicon Device
|
| TND517VS |
Excellent Power Device
|
Sanyo Semicon Device
|
| IPD040N03LG IPS040N03LG |
OptiMOS?3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
OptiMOS庐3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
|
Infineon Technologies AG
|
| AS-V-345XT 0191540012 |
BUTT SPLICE PVC INSUL/EXPD TPD (AS-V-345
|
Molex Electronics Ltd.
|
| KI5935DC |
TrenchFET Power MOSFETS Low rDS(on) Dual and Excellent Power Handling In A Compact Footprint
|
TY Semiconductor Co., Ltd
|
| 110MDS |
Three - Phase Bridge Rectifier Excellent power volume ratio
|
Naina Semiconductor ltd.
|
| 35150-0290 35150-0293 35182-0190 |
1.8 TERM POSITION ASS LOC 351500290 INTERCONNECTION DEVICE
TERMINAL ASSURANCE LOCK YEL INTERCONNECTION DEVICE
.070 TPA 1.80 POWER CONN 351820190 INTERCONNECTION DEVICE
|
Molex, Inc.
|
| IPB08CN10NG10 IPI08CN10NG |
OptiMOS?? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
OptiMOS? Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
|
Infineon Technologies AG
|
| IPB038N12N3G |
OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
|
Infineon Technologies AG
|
| WPM2015 WPM2015-3 WPM2015-3TR |
Single P-Channel, -20V, -2.4A, Power MOSFET Excellent ON resistance for higher DC current
|
TY Semiconductor Co., Ltd
|
