| PART |
Description |
Maker |
| TM020-060-11-32 |
2 ~ 6 GHz 32 dBm Module
|
Transcom, Inc.
|
| TM005-020-14-14 |
0.5 - 2 GHz 14 dBm Module
|
Transcom, Inc.
|
| TM005-020-12-24 |
0.5 - 2 GHz 24 dBm Module
|
Transcom, Inc.
|
| TM020-080-12-24 |
2 ~ 8 GHz 24 dBm Module
|
Transcom, Inc.
|
| TM053-059-11-36 |
5.3 - 5.9 GHz 36 dBm Power Module
|
Transcom, Inc.
|
| TM120-155-06-32 |
12 - 15.5 GHz 32 dBm Power Module
|
Transcom, Inc.
|
| TM010-180-12-13 |
1-18 GHz 13 dBm Gain Module
|
Transcom, Inc.
|
| MGA-81563 |
0.1-6 GHz 3 V, 14 dBm Amplifier(0.1-6 GHz 3 V, 14 dBm 放大
|
Agilent(Hewlett-Packard)
|
| PE71S2022 |
2.92mm SPDT PIN Diode Switch Operating From 2 GHz to 40 GHz Up To plus 27 dBm
|
Pasternack Enterprises,...
|
| TIM1414-2-252 |
HIGH POWER P1dB=33.0 dBm at 13.75 GHz to 14.5 GHz
|
Toshiba Semiconductor
|
| Q62702-G0041 BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| TA008-055-20-24 |
0.8 - 5.5 GHz 25 dBm Amplifier
|
Transcom, Inc.
|
