| PART |
Description |
Maker |
| RFP10P12 RFM10P15 |
(RFP10P12 / RFP10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS
(RFM10P12 / RFM10P15) P-CHANNEL ENHANCEMENT - MODE POWER FIELD-EFFECT TRANSISTORS
|
GE Solid State
|
| SSM3J02T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| PTF10020 |
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
125 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
125 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON POWER MODULES AB
Ericsson Microelectronics
|
| SSM3J14T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Power Management Switch DC-DC Converters
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| MTM40N20 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conduct...
|
| MRF6S21100NR1 MRF6S21100NBR1 |
RF Power Field Effect Transistors
|
FREESCALE[Freescale Semiconductor, Inc]
|
| MRF8S7120NR3 |
RF Power Field Effect Transistor
|
Motorola
|
| VN30ABA VN35ABA |
Field Effect Power Transistor
|
General Electric Solid State
|
| MRF1517NT108 |
RF Power Field Effect Transistor
|
Freescale Semiconductor, Inc
Freescale Semiconductor...
|
| MRF282 MRF282ZR1 MRF282SR1 |
RF Power Field Effect Transistors
|
Freescale Semiconductor, Inc
|
| MTP6N10 |
POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
