| PART |
Description |
Maker |
| M45PE20 M45PE20-VMN6 M45PE20-VMN6G M45PE20-VMN6P M |
4 Mbit Uniform Sector, Serial Flash Memory 4兆位统一部门，串行闪
From old datasheet system
2 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| M45PE16 |
16 Mbit, low-voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface
|
Numonyx B.V
|
| M45PE40-VMW6G M45PE40-VMW6P M45PE40-VMW6TG M45PE40 |
4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface
|
Numonyx B.V
|
| M45PE10-07 M45PE10-VMP6TP M45PE10 M45PE10-VMN6G M4 |
1 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface
|
STMICROELECTRONICS[STMicroelectronics]
|
| M25PE2007 M25PE20-VMN6G M25PE20-VMN6P M25PE20-VMN6 |
1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout
|
STMicroelectronics
|
| M25PE80-VMP6T M25PE80-VMW6P M25PE80-VMP6P M25PE80- |
4 Mbit Uniform Sector, Serial Flash Memory 4兆位统一部门，串行闪
COIL CHOKE 27MH .50A RADIAL 8兆位，低电压，页面与字节可擦除串行闪存更改性，50MHz的SPI总线，标准品
8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory with Byte-Alterability, 50MHz SPI Bus, Standard Pin-out
|
STMicroelectronics N.V.
ST Microelectronics
|
| M29W064FB90N3E M29W064FB90N3F M29W064FT |
64 Mbit (8 Mbit x 8 or 4 Mbit x 16, page, boot block) 3 V supply Flash memory
|
Numonyx B.V
|
| NAND01G-A NAND01GW3A NAND01GW3A0AN6 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
|
| NAND128W3A2BN6 NAND01BGR3A NAND01BGR3A0AN1T NAND01 |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆，256兆，512兆位千兆位（x8/x1628 Byte/264字的页面.8V/3V，NAND闪存芯片
|
意法半导
STMicroelectronics N.V.
|
| M29W128GH70N3E M29W128GL |
128-Mbit (16 Mbit x8 or 8 Mbit x16, page, uniform block) 3 V supply flash memory
128-Mbit (16 Mbit x8 or 8 Mbit x16, page, uniform block) 3 V supply flash memory
|
Numonyx B.V
|
| NAND01G-A NAND128-A NAND256-A NAND01GR3A0AN1 NAND0 |
128 Mbit / 256 Mbit / 512 Mbit / 1 Gbit (x8/x16) 528 Byte/264 Word Page / 1.8V/3V / NAND Flash Memories
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
ST Microelectronics
|
