| PART |
Description |
Maker |
| FDFMA2P029Z08 FDFMA2P029Z |
-20V Integrated P-Channel PowerTrenchMOSFET and Schottky Diode
Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode .20V, .3.1A, 95m
Integrated P-Channel PowerTrench庐 MOSFET and Schottky Diode .20V, .3.1A, 95m
Integrated P-Channel PowerTrench? MOSFET and Schottky Diode .20V, .3.1A, 95m
|
Fairchild Semiconductor
|
| FDFMA2P859T |
-20V Integrated P-Channel PowerTrenchMOSFET and Schottky Diode
|
Fairchild Semiconductor
|
| FDFMA2P853T |
Integrated P-Channel PowerTrench MOSFET and Scottky Diode -20V, -3.0A, 120mOhms
Integrated P-Channel PowerTrench? MOSFET and Schottky Diode
Integrated P-Channel PowerTrench垄莽 MOSFET and Schottky Diode
|
Fairchild Semiconductor
|
| IRF6691TR1 |
Leaded A 20V Single N-Channel HEXFET Power MOSFET with integrated monolithic Schottky diode in a DirectFET MT package rated at 180 amperes.
|
International Rectifier
|
| GM195 |
P N P S I L I CO N P L A N A R M E D I UM POWE R T R A N S I S T O R
|
E-Tech Electronics LTD
|
| SST3585 SST358512 |
3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
|
SeCoS Halbleitertechnologie GmbH
|
| IRF7601 IRF7601TR |
20V Single N-Channel HEXFET Power MOSFET in a Micro 8 package
Power MOSFET(Vdss=20V, Rds(on)=0.035ohm)
Power MOSFET(Vdss=20V/ Rds(on)=0.035ohm)
N-Channel HEXFET Power MOSFET(N沟道 HEXFET 功率MOS场效应管) N沟道HEXFET功率MOSFET的（不适用沟道的HEXFET功率马鞍山场效应管）
N-Channel HEXFET Power MOSFET(N娌?? HEXFET ???MOS?烘?搴??)
|
International Rectifier, Corp.
|
| KE3587-G |
N-channel:VDS=20V ID=4A Drain-Source Voltage Vds 20V
|
TY Semiconductor Co., Ltd
|
