| PART |
Description |
Maker |
| IS62WV51216BLL-55BLI IS62WV51216ALL-70XI IS62WV512 |
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 512K X 16 STANDARD SRAM, 45 ns, PBGA48
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 12k × 16低电压，超低功耗的CMOS静态RAM
512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM 512K X 16 STANDARD SRAM, 55 ns, PDSO44
|
Integrated Silicon Solution, Inc.
|
| HY57V643220DT-6 HY57V643220DLTP-45 HY57V643220DLTP |
4Banks x 512K x 32bits Synchronous DRAM
|
HYNIX[Hynix Semiconductor]
|
| K6F4008R2CFAMILY K6F4008R2C-FF850 |
512K X 8 STANDARD SRAM, 85 ns, PBGA48
512K x 8bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
| TCS59SM804BFTL-80 TCS59SM808BFTL-80 TCS59SM808BFT- |
8M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM)
8M×4Banks×8Bits Synchronous DRAM(48M×8位同步动态RAM)
4M×4Banks×16Bits Synchronous DRAM(44M×16位同步动态RAM) 4米4Banks × 16位同步DRAM米16位同步动态RAM）的
16M×4Banks×4Bits Synchronous DRAM(46M×4位同步动态RAM) 1,600 × 4Banks × 4Bits同步DRAM4,600 × 4位同步动态RAM）的
|
Toshiba Corporation
Toshiba, Corp.
|
| W963A6BBN80E |
512K WORD X 16 BIT LOW POWER PSEUDO SRAM 512K X 16 PSEUDO STATIC RAM, 75 ns, PBGA48
|
Winbond Electronics, Corp.
|
| 79LV0408XPFK-20 79LV0408XPFI-20 79LV0408XPFH-20 79 |
Low Voltage 4 Megabit (512k x 8-bit) EEPROM 512K X 8 EEPROM 3V, 250 ns, PDFP40
Low Voltage 4 Megabit (512k x 8-bit) EEPROM 512K X 8 EEPROM 3V, 200 ns, PDFP40
IC LOGIC 3245 OCTAL FET BUS SWITCH -40 85C QSOP-20 55/TUBE 512K X 8 EEPROM 3V, 250 ns, PDFP40
|
Maxwell Technologies, Inc
|
| W963A6BBN W963A6BBN80I W963A6BBN70 W963A6BBN70E W9 |
Low Power Mobile Products
512K WORD X 16 BIT LOW POWER PSEUDO SRAM
|
WINBOND[Winbond]
Winbond Electronics
|
| EM681FV16A |
512K x 16 bit Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc
|
| EM610FV16CW-12LL EM610FV16CW-55LL EM610FV16CW-55S |
512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc
|
