| PART |
Description |
Maker |
| S7171-0909-01 |
512 × 512 pixels, back-thinned FFT-CCD
|
Hamamatsu Corporation
|
| IDT72V3634L10PF IDT72V3634L15PF8 |
3.3 VOLT CMOS SyncBiFIFO WITH BUS-MATCHING 256 x 36 x 2, 512 x 36 x 2, 1,024 x 36 x 2
512 X 36 BI-DIRECTIONAL FIFO, 10 ns, PQFP128
|
INTEGRATED DEVICE TECHNOLOGY INC
|
| HM1-6642B_883 HM1-6642_883 HM6-6642_883 HM6-6642B_ |
512 x 8 CMOS PROM 512 X 8 OTPROM, 140 ns, CDIP24
512 x 8 CMOS PROM 512 X 8 OTPROM, 220 ns, CDIP24
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| R1LP0408C R1LP0408CSB-5SI R1LP0408CSB-7LI R1LP0408 |
Wide Temperature Range Version 4 M SRAM (512-kword ??8-bit)
R1LP0408C-I Series Datasheet 78K/AUG.01.03
Standard Thick Film Chip Resistor: 10 ohms through 10 megohms, 5 %, 200 ppm, .100 W
Wide Temperature Range Version 4 M SRAM (512-kword 8-bit)
Wide Temperature Range Version 4 M SRAM (512-kword × 8-bit)
Wide Temperature Range Version 4 M SRAM (512-kword 8-bit)
Wide Temperature Range Version 4 M SRAM (512-kword 】 8-bit)
Memory>Low Power SRAM
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Renesas
|
| MSM64Q424-NGS-K MSM64422-XXXMS-K MSM64424-XXXMS-K |
Built-in 256/512-Bit EEPROM and LCD Driver 4-Bit Microcontroller 内置256/512-Bit EEPROM和LCD驱动位微控制
|
OKI SEMICONDUCTOR CO., LTD.
|
| 723631L15PQF9 IDT723641L15PF8 IDT723641L15PQF IDT7 |
512 x 36 SyncFIFO, 5.0V
2K x 36 SyncFIFO, 5.0V
1K x 36 SyncFIFO, 5.0V
512 X 36 OTHER FIFO, 11 ns, PQFP132 PLASTIC, QFP-132
|
IDT
INTEGRATED DEVICE TECHNOLOGY INC
Integrated Device Technology, Inc.
|
| CY7C425-65PC CY7C425-25VI CY7C429-25JI CY7C421-65J |
256/512/1K/2K/4K x 9 Asynchronous FIFO 2K X 9 OTHER FIFO, 15 ns, CDIP28
256/512/1K/2K/4K x 9 Asynchronous FIFO 2K X 9 OTHER FIFO, 25 ns, CDIP28
256/512/1K/2K/4K x 9 Asynchronous FIFO 512 X 9 OTHER FIFO, 65 ns, PQCC32
256/512/1K/2K/4K x 9 Asynchronous FIFO 2K X 9 OTHER FIFO, 25 ns, PQCC32
256/512/1K/2K/4K x 9 Asynchronous FIFO 2K X 9 OTHER FIFO, 15 ns, PQCC32
256/512/1K/2K/4K x 9 Asynchronous FIFO 1K X 9 OTHER FIFO, 25 ns, PDSO28
256/512/1K/2K/4K x 9 Asynchronous FIFO 512 X 9 OTHER FIFO, 65 ns, PDIP28
256/512/1K/2K/4K x 9 Asynchronous FIFO 1K X 9 OTHER FIFO, 30 ns, PDSO28
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| SRI51211 SRI512 SRI512-SBN18/1GE |
512-bit ISO14443-B contactless memory with 2 binary counters, 5 OTP blocks and anti-collision
13.56 MHz short-range contactless memory chip with 512-bit EEPROM and anticollision functions
|
ST Microelectronics
STMicroelectronics
|
| SST29EE512-70-4I-EH SST29LE512-70-4I-EH SST29VE512 |
512 Kbit (64K x 8) page-mode EEPROM
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 EEPROM 3V, 200 ns, PDSO32
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 EEPROM 5V, 70 ns, PDSO32
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 3V PROM, 150 ns, PQCC32
512 Kbit (64K x8) Page-Mode EEPROM 512千位4K的8）页模式的EEPROM
512 Kbit (64K x8) Page-Mode EEPROM 512千位4K的8）页模式EEPROM
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 5V PROM, 70 ns, PQCC32
512 Kbit (64K x8) Page-Mode EEPROM 64K X 8 FLASH 5V PROM, 70 ns, PDSO32
|
SILICON STORAGE TECHNOLOGY INC
Silicon Storage Technology, Inc.
|
| S8844-0909 |
CCD area image sensor 512 × 512 pixels, Back-thinned FFT-CCD
CCD area image sensor 512 】 512 pixels, Back-thinned FFT-CCD
|
Hamamatsu Corporation
|
| IDT7202 IDT7200L12J IDT7200L12J8 IDT7200L12SO IDT7 |
1K x 9 AsyncFIFO, 5.0V
512 x 9 AsyncFIFO, 5.0V
256 x 9 AsyncFIFO, 5.0V
CMOS ASYNCHRONOUS FIFO 256 x 9, 512 x 9 and 1,024 x 9
|
IDT
|
