| PART |
Description |
Maker |
| 5SHX10H6010 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
| IHW40N120R3 |
Reverse conducting IGBT
|
Infineon
|
| IHW15N120R |
Reverse Conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| IHY20N135R3 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
| IKW50N65WR5-15 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
| IHW20N135R3 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
| FR014H5JZ |
High-Side Reverse Bias / Reverse Polarity Protector With Integrated Over Voltage Transient Suppression
|
Fairchild Semiconductor
|
| SLG5NTH1011V |
A 22 V, 50 mΩ, 3 A Reverse Blocking Integrated Power Switch with VIN Lockout Select and MOSFET Current Monitor Output
|
Dialog Semiconductor
|
| TISP5110H3BJ TISP5115H3BJ TISP5190H3BJ |
FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR
|
TY Semiconductor Co., Ltd
TY Semiconductor Co., L...
|
| TISP6NTP2B |
QUAD FORWARD-CONDUCTING BUFFERED P-GATE THYRISTORS
|
List of Unclassifed Manufacturers
ETC[ETC]
|
