| PART |
Description |
Maker |
| SSM5G06FE |
Silicon P-Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
| SSM5H08TU-14 |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
| SSM5G09TU-14 |
Silicon P Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
| SSM6G18NU |
Silicon P Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode Multi-chip discrete device (P-ch SBD)
|
Toshiba Semiconductor
|
| 1SS413 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
| ZUMD54 ZUMD54C |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODES
|
ZETEX[Zetex Semiconductors]
|
| 1SS369 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
| 1SS315 |
SILICON EPITAXIAL SCHOTTKY BARRIER DIODE
|
SEMTECH ELECTRONICS LTD.
|
| SSM5H07TU |
Silicon Epitaxial Schottky Barrier Diode DC-DC Converter
|
Toshiba Semiconductor
|
| HN20S01F |
Silicon Epitaxial Schottky Barrier Type Diode
|
Toshiba
|
| SCS521DS |
Silicon Epitaxial Planar Schottky Barrier Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|