| PART |
Description |
Maker |
| MB85R200108 MB85R2001PFTN-GE1 MB85R2001 |
Memory FRAM CMOS 2 M Bit (256 K 隆驴 8)
Memory FRAM CMOS 2 M Bit (256 K 】 8)
Memory FRAM CMOS 2 M Bit (256 K × 8)
|
Fujitsu Component Limit...
Fujitsu Component Limited.
Fujitsu Media Devices Limited
http://
|
| MB85R2001 MB85R2001PFTN-GE1 |
Memory FRAM CMOS 2 M Bit (256 K × 8)
Memory FRAM CMOS 2 M Bit (256 K 】 8)
|
Fujitsu Component Limited.
Fujitsu Media Devices Limited
|
| MB85R1001PFTN-GE1 MB85R100109 MB85R1001 |
Memory FRAM CMOS 1 M Bit (128 K × 8)
Memory FRAM CMOS 1 M Bit (128 K ? 8)
Memory FRAM CMOS 1 M Bit (128 K 隆驴 8)
|
Fujitsu Component Limited.
|
| MB85RS256 MB85RS256PNF-G-JNE1 |
Memory FRAM CMOS 256 K (32 K 隆驴 8) Bit SPI
Memory FRAM CMOS 256 K (32 K × 8) Bit SPI
|
Fujitsu Media Devices Limited
Fujitsu Component Limited.
|
| MB85RC16PNF-G-JNE1 MB85RC16PNF-G-JNERE1 |
Memory FRAM 16 K (2 K x 8) Bit I2C
|
Fujitsu Component Limited.
http://
|
| MB85RS256A |
Memory FRAM 256 K (32 K x 8) Bit SPI
|
Fujitsu Component Limited.
|
| MB85RC128PNF-G-JNE1 MB85RC128PNF-G-JNERE1 |
Memory FRAM 128 K (16 K x 8) Bit I2C
|
Fujitsu Component Limited.
|
| M6MGD13TW34DWG |
Memory>MCP(Multi Chip Package)>S-CSP(Stacked CSP)
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM
|
Renesas Electronics Corporation
|
| M6MGB_T162S4BVP M6MGB M6MGB162S4BVP M6MGT162S4BVP |
16,777,216-BIT (1,048,576 -WORD BY 16-BIT ) CMOS 3.3V-ONLY FLASH MEMORY
16,777,216-BIT (1,048,576 -WORD BY 16-BIT) CMOS 3.3V-ONLY FLASH MEMORY
CMOS 3.3V-ONLY FLASH MEMORY & CMOS SRAM Stacked-MCP
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| AM49DL320BGT851 AM49DL320BGT85IS AM49DL320BGT85IT |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 32 Mbit (2M x 16-Bit) Pseudo Static RAM
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous
|
AMD[Advanced Micro Devices]
SPANSION[SPANSION]
|
| EN29LV640TT-90TIP EN29LV640TB-90TIP EN29LV640TB-70 |
64 Megabit (8M x 8-bit / 4M x 16-bit) Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only 64兆位米8分x 16位）闪存引导扇区闪存，CMOS 3.0伏，
|
Eon Silicon Solution Inc.
Eon Silicon Solution, Inc.
|
| AM29DL800BB120FI AM29DL800BB90SEB AM29DL800BT90SEB |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 16 FLASH 3V PROM, 70 ns, PDSO44
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 1M X 8 FLASH 3V PROM, 120 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 16 FLASH 3V PROM, 90 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 16 FLASH 3V PROM, 90 ns, PBGA48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 8兆位 M中的x 8-Bit/512亩x 16位）.0伏的CMOS只，同时作业快闪记忆
|
Advanced Micro Devices, Inc.
http://
|
