| PART |
Description |
Maker |
| EDD25163HBH-6ELS-F EDD25163HBH-7FLS-F EDD25163HBH- |
256M bits DDR Mobile RAM WTR (Wide Temperature Range), Low Power Function
256M bits DDR Mobile RAM垄芒 WTR (Wide Temperature Range), Low Power Function
|
Elpida Memory
|
| HY5DU56822AF HY5DU56422AF-J HY5DU561622AF HY5DU564 |
32M X 8 DDR DRAM, 0.7 ns, PBGA60
DDR SDRAM - 256Mb
64Mx4|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M
16Mx16|2.5V|8K|J/M/K/H/L|DDR SDRAM - 256M
|
HYNIX SEMICONDUCTOR INC
|
| H5MS5122DFR H5MS5132DFR |
Mobile DDR SDRAM 512Mbit (16M x 32bit)
|
Hynix Semiconductor
|
| H5MS2562JFR-E3M H5MS2562JFR-J3M H5MS2562JFR-L3M |
Mobile DDR SDRAM 256Mbit (16M x 16bit)
|
Hynix Semiconductor
|
| HY5DU561622T HY5DU56822T |
16Mx16|2.5V|8K|K/H/L|DDR SDRAM - 256M 16Mx16显示|.5V | 8K的| /升| DDR SDRAM内存- 256M
32Mx8|2.5V|8K|K/H/L|DDR SDRAM - 256M 32Mx8 |.5V | 8K的| /升| DDR SDRAM内存- 256M
|
STMicroelectronics N.V.
|
| EDD2516AKTA-5-E EDD2516AKTA-5C-E |
256M bits DDR SDRAM (16M words x16 bits, DDR400)
|
Elpida Memory, Inc.
ELPIDA MEMORY INC
|
| EDJ1104BBSE-DG-F EDJ1104BBSE-DJ-F EDJ1108BBSE-DJ-F |
1G bits DDR3 SDRAM
256M X 4 DDR DRAM, 0.4 ns, PBGA78
256M X 4 DDR DRAM, 0.3 ns, PBGA78
|
Elpida Memory
ELPIDA MEMORY INC
|
| KM48L16031BT-GFZ/Y/0 KM416L8031BT-GFZ/Y/0 KM44L160 |
DDR SDRAM Specification Version 0.61 DDR SDRAM的规格版.61
16M X 8 DDR DRAM, 0.8 ns, PDSO66 0.400 X 0.875 INCH, 0.65 MM PITCH, MS-024FC, TSOP2-66
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| IS46LR32640A |
16M x 32Bits x 4Banks Mobile DDR SDRAM
|
Integrated Silicon Solu...
|
| MT46V32M8P-75ZATF MT46V16M16CV-5BK MT46V64M4 MT46V |
32M X 8 DDR DRAM, 0.75 ns, PDSO66 0.40 INCH, LEAD FREE,PLASTIC, TSOP-66
16M X 16 DDR DRAM, 0.7 ns, PBGA60
Double Data Rate (DDR) SDRAM
|
Micron Technology
|
| HYB18M512160BF-6 HYB18M512160BF-7.5 HYE18M512160BF |
DRAMs for Mobile Applications 512-Mbit DDR Mobile-RAM RoHS compliant
|
Qimonda AG
|
