| PART |
Description |
Maker |
| MRFIC1859 |
Dual-Band GSM 3.6V Integrated RF Power Amplifier(GSM 3.6V集成式射频功
|
Motorola, Inc.
|
| CGY2014TT |
GSM/DCS/PCS power amplifier(GSM/DCS/PCS 功率放大
|
Philips Semiconductors
|
| RF2138PCBA RF2138 |
3V GSM POWER AMPLIFIER 3V的的GSM功率放大
|
RF Micro Devices, Inc.
RFMD[RF Micro Devices]
|
| CGY93P |
GSM 2 stage Power Amplifier MMIC
|
Infineon
|
| MRF18085B |
MRF18085B, MRF18085BR3, MRF18085BLSR3 GSM/GSM EDGE 1.9-1.99 GHz, 85 W, 26 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
| AWT6168 |
GSM/GPRS/Polar EDGE Power Amplifier Module with Integrated Power Control
|
ANADIGICS, Inc.
|
| PF01412A PF01412 |
IC,RF AMPLIFIER,HYBRID,MODULE,8PIN,PLASTIC
From old datasheet system
MOS FET Power Amplifier Module for E-GSM Handy Phone
|
Hitachi America
HITACHI[Hitachi Semiconductor]
|
| TQM7M4007 |
Quad-Band GSM / GPRS Power Amplifier Module
|
TriQuint Semiconductor
|
| TQM7M5005 |
GSM/EDGE Multi-mode Power Amplifier Module
|
TriQuint Semiconductor
|
| PF0121 |
MOS FET Power Amplifier Module for GSM Mobile Phone
|
Hitachi Semiconductor
|
