| PART |
Description |
Maker |
| NTMS4P01R2 NTMS4P01R2/D NTMS4P01R2-D |
Power MOSFET -4.5 Amps, -12 Volts P-Channel Enhancement-Mode Single SO-8 Package
Receptacle With A Standard Tail
Power MOSFET -4.5 Amps-12 Volts
|
ON Semiconductor
|
| NTTD1P02R2-D NTTD1P02R2/D |
Power MOSFET -1.45 Amps-20 Volts
Power MOSFET -1.45 Amps, -20 Volts P-Channel Enhancement Mode Dual Micro8 Package
|
ON Semiconductor
|
| NTD12N10-1G NTD12N10G |
Power MOSFET 12 Amps, 100 Volts; Package: DPAK-3 (SINGLE GAUGE); No of Pins: 4; Container: Rail; Qty per Container: 75 12 A, 100 V, 0.165 ohm, N-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
| 6N10L-TN3-R 6N10G-TN3-R |
6 Amps, 100 Volts N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| NTD12N10-D |
Power MOSFET 12 Amps, 100 Volts N-Channel Enhancement-Mode DPAK
|
ON Semiconductor
|
| MTW32N20E MTW32N20E-D |
Power MOSFET 32 Amps, 200 Volts N-Channel TO-247
Power MOSFET 32 Amps, 200 Volts(32A,200V的功率MOSFET)
|
ON Semiconductor
|
| MMDFS3P303 MMDFS3P303R2 MMDFS3P303-D |
Power MOSFET 3 Amps / 30 Volts
Power MOSFET 3 Amps, 30 Volts P-Channel SO-8, FETKY
|
ONSEMI[ON Semiconductor]
|
| MGSF2N02E MGSF2N02ELT1 MGSF2N02ELT1G MGSF2N02ELT3 |
2.8 Amps, 20 Volts, N−Channel SOT−23 2.8 A, 20 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-236AB
2.8 Amps, 20 Volts, N-Channel SOT-23
2.8 Amps, 20 Volts, N−Channel SOT−23
Power MOSFET 2.8 Amps, 20 Volts
|
ONSEMI[ON Semiconductor]
|
| MTB2P50ET4 MTB2P50ET4G MTB2P50E |
Power MOSFET 2 Amps, 500 Volts(2A, 500V功率MOSFET) 2 A, 500 V, 6 ohm, P-CHANNEL, Si, POWER, MOSFET
Power MOSFET 2 Amps, 500 Volts P−Channel D2PAK
|
ON Semiconductor
|
| SSR2010DRJ SSR2010CAJ SSR2010CTJ SSR2010DJ SR2010C |
20 AMPS 100 VOLTS SCHOTTKY RECTIFER
20 AMPS, 100 VOLTS CENTERTAP SCHOTTKY RECTIFIER 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-257AA
|
SOLID STATE DEVICES INC
SSDI[Solid States Devices, Inc]
Solid State Devices, Inc.
|
| MTP12P10 MTP12P10G |
Power MOSFET 12 Amps, 100 Volts P−Channel TO−220
|
ON Semiconductor
|
|
