| PART |
Description |
Maker |
| HYB18RL25632AC HYB18RL25616AC |
256 Mbit DDR Reduced Latency DRAM
|
INFINEON[Infineon Technologies AG]
|
| MT49H8M36 MT49H16M18 MT49H32M9 |
288Mb CIO Reduced Latency
|
MICRON[Micron Technology]
|
| LTC2421 LTC2422 LTC2421CMS LTC2422CMS LTC2422IMS L |
1-/2-Channel 20-Bit UPower No Latency ADCs in MSOP-10
2-Ch 8ppm INL, 1.2ppm Noise, No Latency Delta Sigma, MS10
8ppm INL, 1.2ppm Noise, 20-Bit No Latency Delta Sigma, MS10
1-/2-Channel 20-Bit Power No Latency DeltaSigmaADCs in MSOP-10
1-/2-Channel 20-Bit µPower No Latency DeltaSigma™ ADCs in MSOP-10
|
LINER[Linear Technology]
|
| LTC2408 LTC2404 |
4-/8-Channel 24-Bit PowerNo Latency Delta-SigmaADC
4-/8-Channel 24-Bit µPowerNo Latency Delta-Sigma™ ADC
4-Ch, 4ppm INL, 1.5uV Noise, No Latency Delta Sigma
8-Ch, 4ppm INL, 1.5uV Noise, No Latency Delta Sigma
|
Linear Technology
|
| MT44K16M36 |
576Mb: x18, x36 RLDRAM 3
|
Micron Technology
|
| IS49NLS96400 IS49NLS18320 |
576Mb (x9, x18) Separate I/O RLDRAM 2 Memory
|
Integrated Silicon Solution, Inc
|
| SI4850EY SI4850EY-E3 SI4850EY-T1 SI4850EY-T1-E3 |
N-Channel Reduced Qg, Fast-Switching MOSFET N沟道Qg，快速开关MOSFET
N-Channel Reduced Qg, Fast Switching MOSFET N沟道减少Qg和，快速开关MOSFET
N-Channel Reduced Qg/ Fast Switching MOSFET
|
Vishay Intertechnology, Inc.
Vishay Siliconix
|
| SI7392DP-T1 SI7392DP |
N-Ch. Reduced Qg, Fast Switching WFET® VDS = 30V; VGS = ± 20V N沟道Qg，快速开关WFET ® ，VDS=30V; VGS=±20V
N-Channel Reduced Qg, Fast Switching WFET
N-Channel Reduced Qg/ Fast Switching WFET
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| AEPDS4M8LB-80 AEPDH4M8LB-80 AEPDS4M8LB-80S AEPDS4M |
x8 Nibble Mode DRAM Module x8半字节模式记忆体模组
x8 Page Mode DRAM Module x8页面模式内存模块
x8 Static Column Mode DRAM Module x8静态列模式DRAM模块
x8 DRAM ModuleUndefined Architecture x8内存，未定义建筑
|
Analog Devices, Inc.
TOKO, Inc.
Altera, Corp.
|
| SI4300DY SI4300DY-TI |
N-Channel Reduced Qg, Fast Switching MOSFET with Schottky
N-Channel 30-V (D-S), Reduced Qg Fast Switching MOSFET with Schottky Diode
|
VISAY[Vishay Siliconix]
|
