| PART |
Description |
Maker |
| BAS16-02 BAS16-02L BAS16-03 BAS16-07L4 BAS16U BAS1 |
General Purpose Diodes - Silicon Switching Diode for high-speed switching
Latest Silicon Discretes - Switching Diode for high speed switching
Silicon Switching Diode 硅开关二极管
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| 2SA1730 0135 |
High-Speed Switching Applications High-Speed Switching Applications
From old datasheet system
PNP Epitaxial Planar Silicon Transistors
|
Sanyo
|
| 2SC4346-Z 2SC4346 |
NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH SPEED SWITCHING, HIGH VOLTAGE SWITCHING
|
NEC[NEC]
|
| 2SC2552 |
TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING HIGH SPEED DC-DC CONVERTER APPLICATIONS.
|
TOSHIBA
|
| 2SK2348 |
N-Channel Silicon MOSFET High-Voltage, High-Speed Switching Applications
High-Voltage/ High-Speed Switching Applications
|
Sanyo Semicon Device
|
| HSU226 |
Diodes>Switching
Silicon Schottky Barrier Diode for High Speed Switching
|
RENESAS[Renesas Electronics Corporation]
|
| BAR99 Q62702-A388 |
Silicon Switching Diode (For high-speed switching)
From old datasheet system
|
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| BAR74 Q62702-F704 |
From old datasheet system
Silicon Switching Diode (For high-speed switching)
|
SIEMENS[Siemens Semiconductor Group]
|
| SMBD914 MMBD914 |
0.25 A, 100 V, SILICON, SIGNAL DIODE
Silicon Switching Diode For high-speed switching applications Qualified according AEC Q101
|
Infineon Technologies AG
|
| H7N0608AB |
Transistors>Switching/MOSFETs
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| H7N1004FM |
Silicon N-Channel MOS FET HigH-Speed Power Switching
Transistors>Switching/MOSFETs
|
Renesas Electronics Corporation
|
