| PART |
Description |
Maker |
| HUF76423S3S HUF76423P3 HUF76423P3NL |
33A, 60V, 0.035 Ohm, N-Channel, Logic Level UltraFET Power MOSFET 35 A, 60 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Dual Differential Drivers and Receivers With /-15-kV IEC ESD Protection 16-TSSOP -40 to 85 35 A, 60 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| PSMN035-150B PSMN035-150B/T3 |
N-channel TrenchMOS SiliconMAX standard level FET
50 A, 150 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET PLASTIC, D2PAK-3
|
NXP Semiconductors N.V.
|
| PHN603S_2 PHN603S118 PHN603S |
TrenchMOS/Schottky diode array Three phase brushless d.c. motor driver
From old datasheet system
5.5 A, 25 V, 0.035 ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-013AD
|
Philips
NXP SEMICONDUCTORS
|
| SIA421DJ-T1-E3 |
12 A, 30 V, 0.035 ohm, P-CHANNEL, Si, POWER, MOSFET
|
VISHAY SILICONIX
|
| FDFS6N303 FDFS6N303S62Z |
6 A, 30 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET
FETKEY N-Channel MOSFET with Schottky Diode
|
FAIRCHILD SEMICONDUCTOR CORP
|
| FQA62N25C |
250V N-Channel MOSFET 62 A, 250 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET
250V N-Channel Advance Q-FET C-Series
|
Fairchild Semiconductor, Corp.
|
| CM75E3U-12H |
Chopper IGBTMOD 75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| STW21NM60ND STB21NM60ND09 STP21NM60ND STI21NM60ND |
N-channel 600 V, 0.17 Ω, 17 A FDmesh II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247
17 A, 600 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Low input capacitance and gate charge
|
STMicroelectronics
|
| PHP37N06LT PHD37N06LT PHB37N06LT PHP37N06 |
TrenchMOS transistor Logic level FET 37 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| 2MBI600NT-060 |
600 A, 600 V, N-CHANNEL IGBT
|
Vishay Intertechnology, Inc.
|
| APT15GT60BRG |
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 15; 30 A, 600 V, N-CHANNEL IGBT, TO-247
|
Microsemi, Corp.
|
|
