| PART |
Description |
Maker |
| NAND01G-A NAND128-A NAND256-A NAND01GR3A0AN1 NAND0 |
128 Mbit / 256 Mbit / 512 Mbit / 1 Gbit (x8/x16) 528 Byte/264 Word Page / 1.8V/3V / NAND Flash Memories
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
|
STMicroelectronics
ST Microelectronics
|
| IDT72V3642L10PF IDT72V3642L10PQF IDT72V3632 IDT72V |
TV 100C 100#22D SKT PLUG
3.3 VOLT CMOS SyncBiFIFO 256 x 36 x 2 512 x 36 x 2 1,024 x 36 x 2 3.3伏的CMOS SyncBiFIFO 256 × 36 × 2 512 × 36 × 2 1024 × 36 × 2
3.3 VOLT CMOS SyncBiFIFO 256 x 36 x 2 512 x 36 x 2 1,024 x 36 x 2 256 X 36 BI-DIRECTIONAL FIFO, 10 ns, PQFP120
3.3 VOLT CMOS SyncBiFIFO 256 x 36 x 2 512 x 36 x 2 1,024 x 36 x 2 256 X 36 BI-DIRECTIONAL FIFO, 10 ns, PQFP132
|
Integrated Device Technology, Inc.
|
| CY14V104LA |
4-Mbit (512 K x 8 / 256 K x 16) nvSRAM
|
Cypress Semiconductor
|
| CY14B104NA-BA20XI CY14B104NA-BA20XIT CY14B104NA-BA |
4-Mbit (512 K ? 8/256 K ? 16) nvSRAM
4-Mbit (512 K × 8/256 K × 16) nvSRAM
|
Cypress Semiconductor
http://
|
| CY14B104NA-BA25IT |
4-Mbit (512 K x 8/256 K x 16) nvSRAM
|
Cypress Semiconductor
|
| CY7C1355C-100BGC CY7C1357C-133AXC CY7C1355C-133AXC |
9-Mbit (256 K x 36 / 512 K x 18) Flow-through SRAM with NoBL Architecture
|
Cypress Semiconductor
|
| CY14B104K-ZS45XI CY14B104K-ZS25XI CY14B104K-ZS25XI |
4-Mbit (512 K x 8/256 K x 16) nvSRAM with Real Time Clock 25 ns and 45 ns access times
|
Cypress Semiconductor
|
| CY7C420-25PC CY7C420-40PC CY7C420-65PC CY7C421 CY7 |
256/512/1K/2K/4K x 9 Asynchronous FIFO 2K X 9 OTHER FIFO, 40 ns, PDIP28
256/512/1K/2K/4K x 9 Asynchronous FIFO 4K X 9 OTHER FIFO, 40 ns, PQCC32
256/512/1K/2K/4K x 9 Asynchronous FIFO 256 X 9 OTHER FIFO, 40 ns, PQFP32
256/512/1K/2K/4K x 9 Asynchronous FIFO 2K X 9 OTHER FIFO, 40 ns, PQFP32
256/512/1K/2K/4K x 9 Asynchronous FIFO 2K X 9 OTHER FIFO, 20 ns, CDIP28
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| AM41PDS3224DB35IS AM41PDS3224DB40IS AM41PDS3224DT1 |
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM 32兆位米16位）.8伏的CMOS只，同时操作，页面模式闪存和4兆位12亩x 8-Bit/256亩x 16位），静态存储器
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM 32兆位米16位）1.8伏的CMOS只，同时操作，页面模式闪存和4兆位12亩x 8-Bit/256亩x 16位），静态存储器
32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only, Simultaneous Operation, Page Mode Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM SPECIALTY MEMORY CIRCUIT, PBGA73
|
Advanced Micro Devices, Inc.
|
| M39P0R1080E4ZASE M39P0R1080E4ZASF M39P0R9080E4 M39 |
512 Mb or 1 Gb (x16, multiple bank, multilevel, burst) Flash memory 256 Mbit low power SDRAM, 1.8 V supply, multichip package
512 Mb or 1 Gb (x16, multiple bank, multilevel, burst) Flash memory 256 Mbit low power SDRAM, 1.8 V supply, multichip package
|
Numonyx B.V
|
| CY7C425-65PC CY7C425-25VI CY7C429-25JI CY7C421-65J |
256/512/1K/2K/4K x 9 Asynchronous FIFO 2K X 9 OTHER FIFO, 15 ns, CDIP28
256/512/1K/2K/4K x 9 Asynchronous FIFO 2K X 9 OTHER FIFO, 25 ns, CDIP28
256/512/1K/2K/4K x 9 Asynchronous FIFO 512 X 9 OTHER FIFO, 65 ns, PQCC32
256/512/1K/2K/4K x 9 Asynchronous FIFO 2K X 9 OTHER FIFO, 25 ns, PQCC32
256/512/1K/2K/4K x 9 Asynchronous FIFO 2K X 9 OTHER FIFO, 15 ns, PQCC32
256/512/1K/2K/4K x 9 Asynchronous FIFO 1K X 9 OTHER FIFO, 25 ns, PDSO28
256/512/1K/2K/4K x 9 Asynchronous FIFO 512 X 9 OTHER FIFO, 65 ns, PDIP28
256/512/1K/2K/4K x 9 Asynchronous FIFO 1K X 9 OTHER FIFO, 30 ns, PDSO28
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| M58LR128GU |
The M58LR128GU/L and M58LR256GU/L are 128 Mbit (8 Mbit x16) and 256 Mbit (16 Mbit
|
ST Microelectronics, Inc.
|
