| PART |
Description |
Maker |
| M30L0R8000B0 |
256 Mbit (16Mb x16, Multiple Bank, Multi-Level, Burst) 1.8V Supply Flash Memory
|
ST
|
| M39P0R9080E0ZAD M39P0R9080E0ZADE M39P0R9080E0ZADF |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 256 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package
|
Numonyx B.V
|
| M36DR232A M36DR232BZA M36DR232AZA |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product 32兆位Mb x16插槽，双行，页闪存和2兆位128K的x16的SRAM，多个存储产
|
STMicroelectronics N.V.
http://
|
| M58WR016QB60ZB6 M58WR032QB60ZB6 M58WR016QB60ZB6E M |
16 Mbit and 32 Mbit (x16, Multiple Bank, Burst) 1.8V supply Flash memories
|
Numonyx B.V
|
| M36DR432A M36DR432A100ZA6C M36DR432A100ZA6T M36DR4 |
32 Mbit 2Mb x16 / Dual Bank / Page Flash Memory and 4 Mbit 256K x16 SRAM / Multiple Memory Product
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| M36DR232A M36DR232B M36DR232BZA M36DR232 M36DR232A |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 2 Mbit 128K x16 SRAM, Multiple Memory Product
32 MBIT (2MB X16, DUAL BANK, PAGE) FLASH MEMORY AND 2 MBIT (128K X16) SRAM, MULTIPLE MEMORY PRODUCT
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| M58LR128HC M58LR128HC70ZB5E M58LR128HC70ZB5U M58LR |
128 Mbit (x16, Mux I/O, Multiple Bank, Multilevel interface, Burst)
|
Numonyx B.V
|
| M58WR064HT70ZB6E M58WR064HT70ZB6F M58WR064HB70ZB6E |
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V supply Flash memories
|
Numonyx B.V
|
| M36L0T7050B2 M36L0T7050B2ZAQ M36L0T7050B2ZAQE M36L |
128 Mbit (Multiple Bank, Multi-Level, Burst) Flash memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package
|
Numonyx B.V
|
| M58LT256JSB M58LT256JSB8ZA6 M58LT256JST8ZA6 M58LT2 |
256 Mbit (16 Mb × 16, multiple bank, multilevel, burst) 1.8 V supply, secure Flash memories
|
STMicroelectronics
|
