| PART |
Description |
Maker |
| IR333-H0-L10 IR333/H0/L10 |
5 mm, 1 ELEMENT, INFRARED LED, 940 nm
5mm Infrared LED , T-1 3/4
|
EVERLIGHT ELECTRONICS CO LTD
Everlight Electronics Co., Ltd
|
| TLN20107 TLN201F TLN201 |
Infrared LED GaA?As Infrared Emitter
Infrared LED GaA??s Infrared Emitter
Infrared LED GaAГAs Infrared Emitter
|
Toshiba Semiconductor
|
| QED123 QED122 QED121 QED122A3R0 |
PLASTIC INFRARED LIGHT EMITTING DIODE 4.95 mm, 1 ELEMENT, INFRARED LED, 890 nm
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| CQX15 |
GaAs INFRARED EMITTING DIODE 4.67 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Fairchild Semiconductor, Corp.
|
| F5D3 F5D1 F5D2 F5D1B |
AlGaAs INFRARED EMITTING DIODE 1 ELEMENT, INFRARED LED, 880 nm
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| LN59L |
GaAs Bi-directional Infrared Light Emitting Diodes 2.5 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Panasonic, Corp.
|
| OED-EL-1L2 |
5 mm, 1 ELEMENT, INFRARED LED, 940 nm LEAD FREE PACKAGE-2
T-5mm, 940mm INFRARED EMITTING DIODE
|
Lumex, Inc.
LUMEX INC.
|
| TLN102 |
TOSHIBA INFRARED LED GaAs INFRARED EMITTER
|
TOSHIBA[Toshiba Semiconductor]
|
| TLN201 |
INFRARED LED GAA AS INFRARED ENITTER
|
Toshiba Corporation
Toshiba Semiconductor
|
| TLN110 |
INFRARED LED GAAS INFRARED EMITTER
|
TOSHIBA[Toshiba Semiconductor]
|
| BIR-BO13E4G-2 BIR-BO13V4V-2 BIR-BN03V4V-2 BIR-BO03 |
5 mm, 1 ELEMENT, INFRARED LED, 850 nm
4.98 mm, 1 ELEMENT, INFRARED LED, 850 nm
4.98 mm, 1 ELEMENT, INFRARED LED, 880 nm
|
American Bright Optoelectronics, Corp.
AMERICAN BRIGHT OPTOELECTRONICS CORP
|
| L279106 |
Infrared LED Small emission spot LED using current confined chip
|
Hamamatsu Corporation
|
