| PART |
Description |
Maker |
| HWC34NC HWC34NC-V1-15 |
C-Band Power Non-Via Hole Chip
C-Band Power FET Non-Via Hole Chip
|
Hexawave, Inc
|
| HWC27YC HWC27YC-V1-15 |
C-Band Power Non-Via Hole Chip
C-Band Power FET Via Hole Chip
|
Hexawave, Inc
|
| MGF0905A MGF0905 0905A |
MINIATURE POWER RELAY
L /S BAND POWER GaAs FET
L,S BAND POWER GaAs FET
LS BAND POWER GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGF0910A 0910A |
MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
L S BAND POWER GaAs FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| NE960R275 NE960R200 NE960R2 NE961R200 |
0.2 W X, Ku-BAND POWER GaAs MES FET 0.2蜡质Ku波段功率GaAs场效应晶体管
0.2 W X Ku-BAND POWER GaAs MES FET
|
NEC, Corp.
NEC[NEC]
|
| NES2527B-30 |
30 W S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC Corp.
|
| MGFK36V4045 |
RECTIFIER SCHOTTKY SINGLE 2A 100V 50A-Ifsm 0.79Vf 0.5A-IR SMB 3K/REEL
14.0-14.5GHz BAND 4W INTERNALLY MATCHED GaAs FET
14.0-14.5 GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| FLC167WF |
C-Band Power GaAs FET
|
Fujitsu Component Limited.
|
| HWF1681RA |
15 W L-band GaAs power FET
|
HEXAWAVE
|
| MGF0910A_1 MGF0910A MGF0910A1 |
L, S BAND POWER GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| FLX207MH-12 |
X, Ku Band Power GaAs FET
|
EUDYNA[Eudyna Devices Inc]
|
| FLC107WG |
C-Band Power GaAs FET
|
EUDYNA[Eudyna Devices Inc]
|
