| PART |
Description |
Maker |
| AGB3312 AGB3312S24Q1 |
50 High Linearity Low Noise Internally Biased Wideband Gain Block 50?/a> High Linearity Low Noise Internally Biased Wideband Gain Block Gain Block Amplifiers 50з High Linearity Low Noise Internally Biased Wideband Gain Block
|
ANADIGICS[ANADIGICS, Inc]
|
| BGU8052 |
Low noise high linearity amplifier
|
NXP Semiconductors
|
| EB1500DFN-AJ FPD1500DFN1 |
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
|
http:// Filtronic Compound Semiconductors
|
| BFP450 |
High Linearity Low Noise Si NPN RF Transistor
|
Infineon Technologies AG
|
| EB1500DFN-BA EB1500DFN-BB EB1500DFN-BC EB1500DFN-B |
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
| EB750DFN-BA EB750DFN-BB EB750DFN-BC EB750DFN-BE FP |
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
|
Filtronic Compound Semiconductors
|
| FPD3000SOT89 |
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
| FPD6836SOT343 |
LOW NOISE, HIGH LINEARITY PACKAGED PHEMT
|
FILTRONIC[Filtronic Compound Semiconductors]
|
| FPD750SOT343CE EB750SOT343-AH EB750SOT343-BA EB750 |
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
|
Filtronic Compound Semiconductors
|
| BFP650 BFP65010 |
High Linearity Low Noise SiGe:C NPN RF Transistor
|
Infineon Technologies AG
|
| AGB3310 AGB3310S24Q1 |
50 High Linearity Low Noise Internally Biased Wideband Gain Block Gain Block Amplifiers 50з High Linearity Low Noise Internally Biased Wideband Gain Block
|
ANADIGICS[ANADIGICS, Inc]
|