| PART |
Description |
Maker |
| PMV16UN |
20 V, 5.8 A N-channel Trench MOSFET Trench MOSFET technology Relay driver
|
TY Semiconductor Co., Ltd
|
| FGA25N120ANTD |
1200V NPT-Trench IGBT Using Fairchild's proprietary trench design and advanced NPT technology
1200V NPT Trench IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| ST2306SRG |
DMOS trench technology
|
TY Semiconductor Co., Ltd
|
| MBRF10100 MBRF10100-E34W MBRB10100 MBRB10100-E34W |
Trench MOS Schottky technology
|
Kersemi Electronic Co., Ltd.
Kersemi Electronic Co., Ltd...
|
| 10-FZ062PA200SA-P996F08 |
Trench Fieldstop IGBT technology
|
Vincotech
|
| 30-F2127PA050SC-L177E09 |
Trench Fieldstop IGBT4 Technology
|
Vincotech
|
| SSF6808A |
Advanced trench process technology
|
Silikron Semiconductor Co.,...
|
| VSSAF5N50 |
Trench MOS Schottky technology
|
Vishay Siliconix
|
| SSF1116 |
Advanced trench process technology
|
Silikron Semiconductor Co.,LTD.
Silikron Semiconductor Co.,...
|
| TSM2301BCXRF |
Advance Trench Process Technology
|
TY Semiconductor Co., Ltd
|
| AM2343P |
Low rDS(on) trench technology
|
TY Semiconductor Co., Ltd
|
