| PART |
Description |
Maker |
| JANSR2N7405 FN4375 |
Quadruple 2-Input Positive-NAND Gates 14-TSSOP -40 to 85 20 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA
25A/ 100V/ 0.070 Ohm/ Rad Hard/ N-Channel Power MOSFET
25A, 100V, 0.070 Ohm, Rad Hard, N-Channel Power MOSFET
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| B25H2S60KL B25H2S20KL B25H2S40KL B25H2S10KL B25H2S |
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|600V V(RRM)|25A I(T)
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|200V V(RRM)|25A I(T)
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|400V V(RRM)|25A I(T)
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|100V V(RRM)|25A I(T)
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|1.2KV V(RRM)|25A I(T)
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|1KV V(RRM)|25A I(T) 晶闸管模块|可控硅|双|独立| 1KV交五（无线资源管理）|5A我（翻译
|
SCHURTER AG
|
| 2SD1841 2SB1231 |
100V/25A Switching Applications
|
SANYO[Sanyo Semicon Device]
|
| NTE5558 NTE5550 NTE5552 NTE5554 |
Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 400V. Forward current 25A.
Silicon Controlled Rectifiers
Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 200V. Forward current 25A.
|
NTE[NTE Electronics]
|
| IRF9150 |
-25A, -100V, 0.150 Ohm, P-Channel Power MOSFET
|
Samsung semiconductor
International Rectifier
Intersil Corporation
|
| ISL6700 ISL6700IR ISL6700IB |
80V/1.25A Peak, Medium Frequency, Low Cost, Half-Bridge Driver
80V/1.25A Peak Medium Frequency Low Cost Half-Bridge Driver
80V/1.25A Peak/ Medium Frequency/ Low Cost/ Half-Bridge Driver
|
INTERSIL[Intersil Corporation]
|
| FRF150R FRF150D FRF150H |
25A/ 100V/ 0.07 Ohm/ Rad Hard/ N-Channel Power MOSFETs
25A, 100V, 0.07 Ohm, Rad Hard, N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| FSF150D FSF150R |
25A, 100V, 0.070 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
25A/ 100V/ 0.070 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
|
Intersil Corporation
|
| RJK1053DPB-15 RJK1053DPB-13 |
100V, 25A, 13m?max Silicon N Channel Power MOS FET Power Switching
100V, 25A, 13m max Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
| RJK1056DPB RJK1056DPB-15 |
100V, 25A, 14m max. Silicon N Channel Power MOS FET Power Switching
100V, 25A, 14m?max. Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
