| PART |
Description |
Maker |
| VSC3040 |
11 Gbps 144 144 Asynchronous Crosspoint Switch
|
Vitesse Semiconductor Corporation.
|
| TC55V2001FI TC55V2001FI-10 TC55V2001FI-10L TC55V20 |
262,144-WORD BY 8-BIT STATIC RAM 262,144 - Word位静态RAM
262,144-Word By 8-Bit Static RAM(262,144× 8位高速静态RAM) 262,144 - Word位静态RAM62144字8位高速静态RAM）的
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
Toshiba, Corp.
|
| AK5321024 |
262,144 Word by 32 Bit CMOS Dynamic Random Access Memory 262,144 Word2位CMOS动态随机存取存储器
|
Accutek Microcircuit, Corp.
|
| SPB-4820ARLWG SPB-4820RLWG SPB-4820BRLWG |
6.144 Gbps / 1270 nm TX / 1330 nm RX / 20 km Digital DiagnosticMulti-Rate CPRI SMSFP
|
Optoway Technology Inc
|
| HYB25M144180C HYB25R144180C HYB25M128160C |
144-Mbit direct RDRAM(144 Mbit 直接 RDRAM)
144-MBit Direct RDRAM(144 M位直接RDRAM) 144兆位的直接的RDRAM144米位直接的RDRAM
128-Mbit direct RDRAM(128 Mbit ?存? RDRAM)
|
SIEMENS AG
|
| M67746 67746 |
From old datasheet system
144-148MHz / 12.5V / 60W / FM MOBILE RADIO
RF POWER MODULE 144-148MHz, 12.5V, 60W, FM MOBILE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M57726R 57726R |
144-148MHz 12.5V /43W /FM MOBILE RADIO
144-148MHz 12.5V,43W,FM MOBILE RADIO
144-148MHZ, 12.5V, 43W, FM MOBILE RADIO
From old datasheet system
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| IS28F200BVB-120TI IS28F200BVT-120TI IS28F200BVB-80 |
CRYSTAL 9.8304MHZ 20PF HC-49/UA
G1 802.15.4 2.4GHZ 256K X 8 FLASH 5V PROM, 60 ns, PDSO48
SIP 802.15.4 2.4GHZ 16KB 256K X 8 FLASH 5V PROM, 80 ns, PDSO48
131,072 x 16/262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY 256K X 8 FLASH 5V PROM, 60 ns, PDSO48
131,072 x 16/262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY 131,072 x二百六十二分之十六，144 × 8 SmartVoltage引导块闪
|
Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
|
| HM514260LTT-10 HM514260LTT-7 HM514260LTT-8 HM51426 |
100ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
|
Hitachi Semiconductor
|
| MT49H8M32BM-4 MT49H8M32FM-4 |
8M X 32 DDR DRAM, PBGA144 11 X 18.50 MM, LEAD FREE, MICRO, BGA-144
8M X 32 DDR DRAM, PBGA144 11 X 18.50 MM, MICRO, BGA-144
|
NEC, Corp.
|
