| PART |
Description |
Maker |
| SPLMY81X2 |
Passively Cooled Diode Laser Bar, 35 W cw at 808 nm
|
OSRAM GmbH
|
| SPLMN81G2 |
Passively Cooled Diode Laser Bar, 50 W cw at 808 nm
|
OSRAM GmbH
|
| SPLMN81S9 |
Passively Cooled Diode Laser Bar, 150 W qcw at 808 nm
|
OSRAM GmbH
|
| SPLLG91-P |
Conductively cooled SIRILAS? Laser Diode Array 15 W cw at 915nm
Conductively cooled SIRILAS㈢ Laser Diode Array 15 W cw at 915nm
|
OSRAM GmbH
|
| SPLE20N81G2 |
Actively Cooled Diode Laser Bar, 1200 W cw at 808 nm
|
OSRAM GmbH
|
| ML9XX31 ML9SM31 ML9SM31-01-00 ML9SM31-01-01 ML9SM3 |
1536 nm, LASER DIODE
1553 nm, LASER DIODE
1558 nm, LASER DIODE
1544 nm, LASER DIODE
InGaAsP DFB-LASER DIODE WITH EA MODULATOR InGaAsP的激光器激光二极管EA调制
InGaAsP DFB-LASER DIODE WITH EA MODULATOR InGaAsP的激光器激光二极管与EA调制
1549 nm, LASER DIODE
|
Mitsubishi Electric Semicon...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| ML9XX22 ML9SM11 ML9SM11-02 ML9SM11-03 ML9SM22 ML9S |
2.5Gbps DWDM InGaAsP DFB-LASER DIODE 高达2.5Gbps的DWDM激光器InGaAsP的激光二极管
1557 nm, LASER DIODE
1555 nm, LASER DIODE
|
Mitsubishi Electric Semicon...
Mitsubishi Electric, Corp.
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| C484 |
(C48x) 2.5 G-Bits Cooled Laser Transmitters
|
Agere Systems
|
| NX6514EH |
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2
|
Renesas Electronics Corporation
|
| SLD324ZT-21 SLD324ZT |
High-Power Density 2W Laser Diode
798 nm, LASER DIODE M-272, 12 PIN
|
SONY
NXP Semiconductors N.V.
|
