| PART |
Description |
Maker |
| SPLMN81X2 |
808 nm, LASER DIODE
Passively Cooled Diode Laser Bar, 40 W cw at 808 nm
|
OSRAM GmbH
|
| L4-2495-002 L4-2495-001 |
High-Power 4.5 W 808 nm Fiber-Coupled Diode Laser
|
JDS Uniphase Corporation
|
| SPLBG81-2S |
Un-mounted Laser Bars, 50% Fill-factor, 808 nm
|
OSRAM GmbH
|
| SPLCG810 |
Laser C-Mount 808 nm, 100 mym aperture
|
Infineon
|
| NX7563JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 550 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX6514EH |
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2
|
Renesas Electronics Corporation
|
| NX6510GH |
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2
|
Renesas Electronics Corporation
|
| NX8346TS |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
Renesas Electronics Corporation
|
| DL-3038-033 |
Red Laser Diode Index Guided AlGaInP Laser Diode
|
Sanyo Semiconductor
|
| DL-3147-141 DL-3147-241 |
Red Laser Diode Index Guided AlGaInP Laser Diode
|
SANYO
|
