| PART |
Description |
Maker |
| SPLMN98X2 |
Passively Cooled Diode Laser Bar, 40 W cw at 808 nm
|
OSRAM GmbH
|
| SPLMN91G2 |
Passively Cooled Diode Laser Bar, 50 W cw at 915 nm
|
OSRAM GmbH
|
| SPLE10N81G2 |
Actively Cooled Diode Laser Bar, 600 W cw at 808 nm
|
OSRAM GmbH
|
| S1300-5MG-FW S1300-5MG-BL |
Un-cooled Laser diode with MQW structure Wide operation temperature range
|
Roithner LaserTechnik GmbH
|
| ML9XX31 ML9SM31 ML9SM31-01-00 ML9SM31-01-01 ML9SM3 |
1536 nm, LASER DIODE
1553 nm, LASER DIODE
1558 nm, LASER DIODE
1544 nm, LASER DIODE
InGaAsP DFB-LASER DIODE WITH EA MODULATOR InGaAsP的激光器激光二极管EA调制
InGaAsP DFB-LASER DIODE WITH EA MODULATOR InGaAsP的激光器激光二极管与EA调制
1549 nm, LASER DIODE
|
Mitsubishi Electric Semicon...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
| MP04DD810-30-W3A MP04DD810 MP04DD810-24-W2 MP04DD8 |
Dual Rectifier Diode Water Cooled Module Preliminary Information 885 A, 3000 V, SILICON, RECTIFIER DIODE
Dual Rectifier Diode Water Cooled Module Preliminary Information 885 A, 2400 V, SILICON, RECTIFIER DIODE
Dual Rectifier Diode Water Cooled Module Preliminary Information 885 A, 2800 V, SILICON, RECTIFIER DIODE
|
http://
DYNEX[Dynex Semiconductor]
Dynex Semiconductor Ltd.
Dynex Semiconductor, Ltd.
|
| NX7335AN-AA NX7335BN-AA |
LASER DIODE 1 310 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE WITH MONITOR PD FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX7535BN-AA NX7535AN-AA |
LASER DIODE 1 550 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE WITH MONITOR PD FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX6314EH |
LASER DIODE 1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND 3 Gb/s BTS
|
Renesas Electronics Corporation
|
| NX6510GH |
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2
|
Renesas Electronics Corporation
|
| NX6342EP |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION
|
Renesas Electronics Corporation
|
