| PART |
Description |
Maker |
| MTE8600N2 |
High Power Infrared Emitter
|
Marktech Corporate
|
| SFH4550 |
High Power Infrared Emitter (850 nm)
|
OSRAM GmbH
|
| VSMY7850X011106 |
High Power Infrared Emitting Diode, 850 nm, Surface Emitter Technology
|
Vishay Siliconix
|
| Q62703-Q1090 SFH483E7800 SFH483 |
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 1 ELEMENT, INFRARED LED, 880 nm
GaAlAs-IR-Lumineszenzdiode GaAlAs Infrared Emitter 发动器，红外Lumineszenzdiode GaAlA红外发射
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| ASDL-4560 ASDL-4650-C22 |
High Performance Infrared Emitter (875nm) ChipLED
|
Avago Technologies Ltd.
AVAGO TECHNOLOGIES LIMITED
|
| ASDL-4561 ASDL-4651-C22 |
High Performance Infrared Emitter (870nm) ChipLED
|
AVAGO TECHNOLOGIES LIMITED
|
| SFH4000 |
Schnelle IR-Lumineszenzdiode High Speed Infrared Emitter
|
OSRAM GmbH
|
| MTE108CL-J |
Infrared Emitter
5mm Metal Can IR Emitter
|
Marktech Optoelectronics
MARKTECH[Marktech Corporate]
|
| VSMY3850-GS08 VSMY3850-GS18 |
High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology
|
Vishay Siliconix
|
| VSLY3850 |
High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology
|
Vishay Siliconix
|
| VSMY2850G VSMY2850RG |
High Speed Infrared Emitting Diodes, 850 nm, Surface Emitter Technology
|
Vishay Siliconix
|
