| PART |
Description |
Maker |
| IDT72V8981 IDT72V8981DB IDT72V8981J IDT72V8981J8 7 |
From old datasheet system
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 128 x 128
128 x 128 TSI, 4 I/O at 2Mbps, Variable Delay, 3.3V
|
Integrated Device Technology
IDT
|
| MBM29F200BA |
2 M (256 K ×8/128 K ×16) BIT Flash Memory(2 M (256 K ×8/128 K ×16)V 电源电压闪速存储器) 2米（256亩8 / 128亩16）位闪存米（256亩8 / 128亩16）位V的电源电压闪速存储器
|
Fujitsu, Ltd.
|
| ST93C57B1013TR ST93C57B1TR ST93C57B3013TR ST93C57B |
2K 128 x 16 or 256 x 8 SERIAL MICROWIRE EEPROM
2K 128 x 16 or 256 x 8 SERIAL MICROWIRE EEPROM 2K 128 x 1656 × 8 MICROWIRE的串行EEPROM
2K (128 x 16 or 256 x 8) SERIAL MICROWIRE EEPROM
|
STMicroelectronics N.V.
意法半导
MICROCHIP[Microchip Technology]
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
SGS Thomson Microelectronics
|
| UPB586G UPB588G UPB1505 UPB1505GR UPB1505GR-E1 |
3.0 GHz PRESCALER DIVIDED BY 256, 128, 64 FOR BS/CS TUNER
3.0 GHz PRESCALER DIVIDED BY 256, 128, 64 FOR BS/CS TUNER 3.0 GHz的预分频器分裂学士学位，256284 /政务司司长调谐器
3.0 GHz PRESCALER DIVIDED BY 256/ 128/ 64 FOR BS/CS TUNER
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| 29PL256N S29PL127N65GAW003 S29PL127N65GAWW00 S29PL |
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory
|
SPANSION
|
| S29GL064M90FCIR00 S29GL064M90BCIR82 S29GL064M90FAI |
256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 m MirrorBit Process Technology
256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology 256,128,64,32.0兆伏安只页面模式闪存具有0.23レ米MirrorBit工艺技
256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO56
256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 ?? MirrorBit Process Technology
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
| AM29F200A-1 AM29F200AB-120DGC AM29F200AB-120DGC1 A |
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash MemoryDie Revision 1
PCB COPPER CLAD 6X9 1/32 2-SIDE
DIN Audio Connector; Number of Contacts:5; Contact Termination:Solder; Mounting Type:Panel; Gender:Receptacle; Contact Plating:Silver; Series:C091A
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 256K X 8 FLASH 5V PROM, 90 ns, UUC42
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 2兆位256亩x 8-Bit/128亩x 16位）.0伏的CMOS只，扇区闪存模修
M39012 MIL RF CONNECTOR 2兆位56亩x 8-Bit/128亩x 16位）.0伏的CMOS只，扇区闪存模修
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Sectored Flash Memory-Die Revision 1 2兆位56亩x 8-Bit/128亩x 16位）.0伏的CMOS只，扇区闪存模修
|
AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| CY7C342 CY7C342-25 CY7C342-30 CY7C342-35 CY7C342B |
128-Macrocell MAX EPLDs 128宏单元最EPLDs
128-Macrocell MAX EPLDs OT PLD, 40 ns, PQCC68
128-Macrocell MAX EPLDs OT PLD, 25 ns, PQCC68
128-Macrocell MAX EPLDs UV PLD, 40 ns, CQCC68
ECONOLINE: RSZ/P - 1kVDC & 2kVDC Isolation- UL94V-0 Package Material- No Heatsink Required- No Extern. Components Required- Toroidal Magnetics- ContinuousShort Circuit Protection ( /P-Suffix)
128-Macrocell MAX® EPLD
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
|
| DG-24128-06 |
240 x 128 dots STN LED Backlight 1/128 Duty
|
Excel Technology
|
| BL93C56 |
2K bits (256 X 8 or 128 X 16)/ 4K bits (512 X 8 or 256 X 16) Three-wire Serial EEPROM
|
SHANGHAI BELLING CO., LTD.
|
