| PART |
Description |
Maker |
| TC58512FT |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 马鞍山暂定东芝数字集成电路硅栅CMOS
512-MBIT (64M x 8 BITS) CMOS NAND E2PROM
|
Toshiba, Corp.
|
| TC51WHM616AXBN65 TC51WHM616AXBN70 |
4,194,304-WORD BY 16-BIT CMOS PSEUDO STATIC RAM
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| TC74ACT139F TC74ACT139FN TC74ACT139FT TC74ACT139P |
TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
|
TOSHIBA[Toshiba Semiconductor]
|
| TC7MA245FK |
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
|
Toshiba Semiconductor
|
| TC74HC283AP TC74HC283 TC74HC283AF TC74HC283AFN |
TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
|
TOSHIBA[Toshiba Semiconductor]
|
| TCS10DLU-14 |
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
|
Toshiba Semiconductor
|
| TC7SBD384FU |
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
|
TOSHIBA[Toshiba Semiconductor]
|
| TC7SZ14FU TC7SZ14F |
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
|
TOSHIBA[Toshiba Semiconductor]
|
| TC7MTX01FK |
TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC
|
TOSHIBA[Toshiba Semiconductor]
|
| TB9060FN |
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
|
TOSHIBA[Toshiba Semiconductor]
|
