| PART |
Description |
Maker |
| MTM8N60 MTH8N60 MTH8N55 |
(MTH8N55 / MTH8N60) Power Field Effect Transistor
Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
|
MOTOROLA INC
MOTOROLA[Motorola, Inc]
Motorola Semiconductor
Motorola, Inc.
|
| SSM3J02T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SJ619 |
ZD-3.6V- 1 W
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2MOSV)
Field Effect Transistor Silicon P Channel MOS Type (L2-PI-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications
|
Toshiba Corporation
Toshiba Semiconductor
Sanyo Semicon Device
|
| SSM3K03FE |
100 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK3387 |
Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV) Switching Regulator, DC-DC Converter and Motor Drive Applications
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2-pi-MOSV) 东芝场效应晶体管频道马鞍山型（二π- MOSV
From old datasheet system
|
PMC-Sierra, Inc.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| PTF10007 |
35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor 35瓦，1.0 GHz的GOLDMOS场效应晶体管
35 Watts/ 1.0 GHz GOLDMOS Field Effect Transistor
35 Watts 1.0 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| PTF102027 |
40 Watts, 92560 MHz GOLDMOS Field Effect Transistor
40 WATTS, 925-960 MHZ GOLDMOS FIELD EFFECT TRANSISTOR
|
Ericsson Microelectronics
|
| STS2306 |
N-Channel Enhancement Mode Field Effect Transistor
N-Channel E nhancement Mode Field Effect Transistor
|
SamHop Microelectronics Corp.
|
| NDP6020P NDB6020P |
P-Channel Enhancement Mode Field Effect Transistor24A,-20V0.05ΩP沟道增强型MOS场效应管（漏电流-24A, 漏源电压-20V，导通电0.05Ω 24 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
P-Channel Logic Level Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
http://
|
| SSM3J14T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII)
Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Power Management Switch DC-DC Converters
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SK3543 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV)
|
Toshiba Semiconductor
|
| 2SK2613 |
Field Effect Transistor Silicon N Channel MOS Type (pi-MOSIII) Switching Regulator Applications, DC-DC Converter and Motor Drive Applications
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSIII)
|
TOSHIBA[Toshiba Semiconductor]
|
