| PART |
Description |
Maker |
| VMO550-01F |
HiPerFET MOSFET Module 590 A, 100 V, 0.0021 ohm, N-CHANNEL, Si, POWER, MOSFET
MOSFET Modules
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| PM20CSJ060 PM400DAS060 PM100DSA120 PM300CVA060 PM3 |
IPMS Modules: 600V
MITSUBISHI INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE
IPMS Modules:1200V
50Amp - intelligent power modules
|
Mitsubishi Electric Corporation
|
| IXFN44N50U2 IXFN44N50U3 IXFN48N50U2 IXFN48N50U3 IX |
HiPerFET Power MOSFET （Buck & Boost Configurations for PFC & Motor Control Circuits最大漏源击穿电00V,导通电.10Ω的N沟道增强型HiPerFET功率MOSFET（步步降配置，用于PFC和电机控制电路）)
HiPerFET Power MOSFETs
MOSFET Modules
|
IXYS Corporation
|
| FMM140-004PL FMM140-004P |
MOSFET Modules
Trench Power MOSFET
|
IXYS Corporation
|
| SKM181A3 |
Power MOSFET Modules
|
Semikron
|
| VBO21-12NO7 VBO21-08NO7 VBO21-06NO7 |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges
|
IXYS Corporation
|
| VBO65-12NO7 VBO65-16NO7 VBO65-08NO7 VBO65-14NO7 VB |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges
|
IXYS
|
| VBE17-12NO7 |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges with Fast Recovery Diodes
|
IXYS
|
| VBE26-06NO7 |
Power Modules/Rectifier Bridge Modules: Single Phase Diode Bridges with Fast Recovery Diodes
|
IXYS
|
| PM15CNJ060 E80271 E80276 |
MITSUBISHI <INTELLIGENT POWER MODULES> FLAT-BASE TYPE INSULATED PACKAGE 三菱\u003cINTELLIGENT POWER MODULES\u003e平性基地型绝缘包装
INTELLIGENT POWER MODULES FLAT-BASE TYPE INSULATED PACKAGE
MITSUBISHI FLAT-BASE TYPE INSULATED PACKAGE
IPMS Modules: 600V
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| PM10CNJ060 |
IPMS Modules: 600V
INTELLIGENT POWER MODULES
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
