| PART |
Description |
Maker |
| S8865-64G-15 |
Photodiode array combined with signal processing IC for X-ray detection
|
Hamamatsu Corporation
|
| S8865-256 S8865-256G |
Photodiode array combined with signal processing circuit chip
|
Hamamatsu Corporation
|
| G7151-16 G7150 G7150-16 |
InGaAs PIN photodiode array
Active area: 0.45x1mm; spectral response range:0.9-1.7um; reverse voltage:5V; InGaAs PIN photodiode array: 16-element array. For near infrared (NIR) spectrophotometer
|
HAMAMATSU[Hamamatsu Corporation]
|
| S4111-35Q S4111-16Q S4111-16R S4111-46Q S4114-35Q |
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR
|
Hamamatsu Corporation
|
| NFA31GD1004704D NFA31GD4704704D NFA31GD1001014D NF |
EMIFIL (RC Combined) Array
|
Murata Manufacturing Co., Ltd.
Murata Manufacturing Co...
|
| OPR2101 |
Six Element Photodiode Array in
|
OPTEK[OPTEK Technologies]
|
| RL0128TCQ111 RL0512TCQ011 |
LINEAR SELF-SCANNED PHOTODIODE ARRAY 线性自扫描光电二极管阵
|
Analog Devices, Inc.
|
| KOM0622045 |
8-CHIP SILICON PHOTODIODE ARRAY VERY LOW DARK CURRENT
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| RL1282D |
(RL1282D - RL1288D) High Speed Charge Coupled Photodiode Array
|
EG&G Reticon
|
| KOM2100B KOM2100BF Q62702-K35 Q62702-K34 |
6fach-Silizium-PIN-Fotodiodenarray 6-Chip Silicon PIN Photodiode Array
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q |
MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN
MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵
|
Hamamatsu Photonics K.K.
|
