| PART |
Description |
Maker |
| S6846 S10053 S6809 |
MOSFET, Switching; VDSS (V): 600; ID (A): 11; Pch : -; RDS (ON) typ. (ohm) @10V: 0.58; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1450; toff (µs) typ: -; Package: LDPAK (S)- (1)
Light modulation photo IC 光调制照片集成电
|
Hamamatsu Photonics
|
| PSR11EL6-D |
Exterior light endure by phase-modulation
|
KODENSHI KOREA CORP.
|
| GP2A20 GP2A22 |
Light Modulation/ Long Focal Distance Type OPIC Photointerrupter
Light Modulation, Long Focal Distance Type OPIC Photointerrupter
|
SHARP[Sharp Electrionic Components]
|
| KPS1008C |
photo switch is composed of a modulated infrared emitting diode at the light-emitting side and a modulated photo IC
|
KODENSHI KOREA CORP.
|
| EL7900 EL7900ILCZ |
Ambient Light Photo Detect IC
|
Intersil Corporation
|
| ISL29000IROZ-T7 ISL2900007 ISL29000IROZ |
Ambient Light Photo Detect IC
|
Intersil Corporation
|
| PLR132 |
Photo link Light Receiver Unit
|
EverLight
|
| PLR253 PLR253-S1 PLR253-S5 |
Photo link Light Receiver Unit
|
Everlight Electronics Co., Ltd
|
| LS627 |
PHOTO FET LIGHT SENSITIVE JFET
|
LINEAR[Linear Integrated Systems]
|
| HSDL-9001 |
Miniature Surface-Mount Ambient Light Photo Diode
|
Agilent(Hewlett-Packard)
|
| NTE3036 |
Phototransistor Silicon NPN Photo Darlington Light Detector
|
NTE[NTE Electronics]
|
| PSR11D PSR11L |
composed of a modulated infrared emitting diode at the light-emitting side and a modulated photo IC at the light receiving side
|
KODENSHI KOREA CORP.
|
