| PART |
Description |
Maker |
| OM6N100SA OM5N100SA OM3N100SA OM3N100ST OM1N100SA |
1000V; up to 6 Amp, N-channel MOSFET
1000V Single N-Channel Hi-Rel MOSFET in a D3 package
1000V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE
|
Omnirel
International Rectifier
ETC
List of Unclassifed Manufacturers
|
| FQH8N100C |
N-Channel QFETMOSFET 1000V, 8.0A, 1.45
1000V N-Channel MOSFET
|
Fairchild Semiconductor
|
| IRHY7G30CMSE |
1000V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-257AA package
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) 1000V, N-CHANNEL RAD Hard⑩ HEXFET TECHNOLOGY
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA) 1000V, N-CHANNEL RAD Hard HEXFET TECHNOLOGY
|
International Rectifier
|
| APT1004R2KN APT1004RKN |
POWER MOS IV 1000V 3.6A 4.00 Ohm / 1000V 3.5A 4.20 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| STW8NB100 6509 |
N - CHANNEL 1000V - 1.2ohm- 8A - TO-247 PowerMESH MOSFET
From old datasheet system
N - CHANNEL 1000V - 1.2 - 8A - TO-247 PowerMESH TM MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| STU7NB100 6508 |
N - CHANNEL 1000V - 1.2 - 7.3A - Max220 PowerMESH TM MOSFET
From old datasheet system
N - CHANNEL 1000V - 1.2ohm - 7.3A - Max220 PowerMESH MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| SCD4003 |
VOLTAGE 200V ~ 1000V 1.0 AMP Glass Passivated Rectifier
|
SeCoS Halbleitertechnologie GmbH
|
| 4GBJ1002 4GBJ10005 4GBJ1004 4GBJ1001 4GBJ1008 4GBJ |
Voltage 50V ~ 1000V 10.0 Amp Glass Passivited Bridge Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| 4GBJ8005 4GBJ801 4GBJ804 4GBJ806 4GBJ810 4GBJ802 4 |
Voltage 50V ~ 1000V 8.0 Amp Glass Passivited Bridge Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| GBJ10005 |
Voltage 50V ~ 1000V 10.0 Amp Glass Passivited Bridge Rectifiers
|
SeCoS Halbleitertechnologie GmbH
|
| EP01C AP01C EP01 |
1000V,Fast-Recovery Rectifier Diodes(1000V,快速恢复整流二极管)
|
http://
SANKEN[Sanken electric]
Sanken Electric Co.,Ltd.
|
| NDS9952ANL |
Dual N & P-Channel Enhancement Mode Field Effect Transistor 3.7 A, 30 V, 0.08 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
