| PART |
Description |
Maker |
| HN2E04F |
MULTI CHIP DISCRETE DEVICE Super High Speed Switching Application
|
Toshiba Corporation
Toshiba Semiconductor
|
| SSM5H11TU |
Silicon N Channel MOS Type (U-MOS3)/Silicon Epitaxial Schottky Barrier Diode
Multi-chip discrete device (N-ch SBD)
|
Toshiba Semiconductor
|
| AK49064SP-10 AK44064SP-10 AK44256SN-12 AK411024SRM |
64K X 9 MULTI DEVICE DRAM MODULE, 100 ns, SMA30
64K X 4 MULTI DEVICE DRAM MODULE, 100 ns, SMA22
256K X 4 MULTI DEVICE DRAM MODULE, 120 ns, SMA22
1M X 1 MULTI DEVICE DRAM MODULE, 150 ns, SMA22
128K X 1 MULTI DEVICE DRAM MODULE, 150 ns, CDIP18
64K X 2 MULTI DEVICE DRAM MODULE, 150 ns, CDIP18
|
|
| TH50VPN564 TH50VPN5640EBSB |
MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS PSEUDO SRAM AND NAND E2PROM MEMORY MIXED MULTI-CHIP PACKAGE
|
TOSHIBA
|
| AS8S128K32PN-17/XT AS8S128K32PN-25/XT AS8S128K32PN |
128K X 32 MULTI DEVICE SRAM MODULE, 17 ns, PGA66 PGA-66
128K X 32 MULTI DEVICE SRAM MODULE, 25 ns, PGA66 PGA-66
128K X 32 MULTI DEVICE SRAM MODULE, 35 ns, PGA66 PGA-66
128K X 32 MULTI DEVICE SRAM MODULE, 45 ns, PGA66 PGA-66
128K X 32 MULTI DEVICE SRAM MODULE, 17 ns, CQFP68 CERAMIC, QFP-68
|
Micross Components
Austin Semiconductor, Inc
|
| TPC6D03 |
Multi-Chip Device Silicon PNP Epitaxial Type, Schottky Barrier Diode High-Speed Switching Applications DC-DC Converter Applications
|
TOSHIBA
|
| 8P008SRV1303I15 8P001SRV1303C15 8P008SRV1303C25 8P |
4M X 16 MULTI DEVICE SRAM CARD, 150 ns, XMA68 CARD-68
64K X 16 MULTI DEVICE SRAM CARD, 150 ns, XMA68 CARD-68
4M X 16 MULTI DEVICE SRAM CARD, 250 ns, XMA68 CARD-68
64K X 16 MULTI DEVICE SRAM CARD, 250 ns, XMA68 CARD-68
128K X 16 MULTI DEVICE SRAM CARD, 250 ns, XMA68 CARD-68
256K X 16 MULTI DEVICE SRAM CARD, 250 ns, XMA68 CARD-68
384K X 16 MULTI DEVICE SRAM CARD, 250 ns, XMA68 CARD-68
128K X 16 MULTI DEVICE SRAM CARD, 150 ns, XMA68 CARD-68
256K X 16 MULTI DEVICE SRAM CARD, 150 ns, XMA68 CARD-68
384K X 16 MULTI DEVICE SRAM CARD, 150 ns, XMA68 CARD-68
|
White Electronic Designs, Corp.
|
| PUMA68SV32000BM-020 PUMA68SV32000BI-015 |
1M X 32 MULTI DEVICE SRAM MODULE, 20 ns, PQCC68 25.27 X 25.27 MM, 5.08 MM HEIGHT, PLASTIC, LCC-68
1M X 32 MULTI DEVICE SRAM MODULE, 15 ns, PQCC68
|
ST Microelectronics
|
| CE201210-6N8J CE201210-5N6J CE201210-4N7J CE201210 |
IC,MOT,MC68HC908GR8CP, DIP-28, MCU FLASH 8BIT 8MHZ 4K
IC,MCU,MC68HC908JB8ADW,8-BIT SOIC-28,21 I/O,3MHZ
IC,MCU,MC68HC711E9CFN2,8-BIT 2MHz,PLCC52
8-BIT, OTPROM, 2.1 MHz, MICROCONTROLLER, PDIP20
IC,MCU,MC68HC908KX8CDW,8-BIT SOIC-16,13 I/O,8MHZ
Multi-Layer Chip Inductors 1 ELEMENT, 0.12 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.0056 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.33 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.0027 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.0068 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
Multi-Layer Chip Inductors 1 ELEMENT, 0.0082 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
IC,MCU,MC68HC705C9ACFN,8-BIT PLCC-44,31 I/O,2MHZ 多层片式电感
Multi-Layer Chip Inductors 1 ELEMENT, 0.39 uH, CERAMIC-CORE, GENERAL PURPOSE INDUCTOR, SMD
|
Bourns Inc.
Bourns, Inc.
|
| SYS32256LK-30 SYS32256ZK-30 SYS32256LKLI-30 SYS322 |
256K X 32 MULTI DEVICE SRAM MODULE, 30 ns, SMA64 PLASTIC, SIMM-64
256K X 32 MULTI DEVICE SRAM MODULE, 30 ns, ZMA64 PLASTIC, ZIP-64
|
TE Connectivity, Ltd.
|
| WS128K32V-35HS WS128K32V-35HC |
512K X 8 MULTI DEVICE SRAM MODULE, 35 ns, HIP66
512K X 8 MULTI DEVICE SRAM MODULE, 35 ns, CPGA66
|
WHITE ELECTRONIC DESIGNS CORP
|
|
