| PART |
Description |
Maker |
| HN1B01F |
Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications
|
TOSHIBA
|
| 2SB941 2SB941A 2SD1266A 2SB0941 2SD1266 2SB941APQ |
Silicon PNP epitaxial planar type power transistor
Silicon PNP epitaxial planar type(For low-frequency power amplification)
3 A, 80 V, PNP, Si, POWER TRANSISTOR
3 A, 60 V, PNP, Si, POWER TRANSISTOR
|
PANASONIC[Panasonic Semiconductor]
PANASONIC CORP
|
| 2SA2102 |
Silicon PNP epitaxial planar type 3 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
Panasonic, Corp.
Panasonic Semiconductor
|
| RN4602 |
Transistor PNP Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Switching/ Inverter Circuit/ Interface Circuit And Driver Circuit Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SA2164 |
Silicon PNP epitaxial planar type For high-frequency amplification 30 mA, 20 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Panasonic, Corp.
Panasonic Semiconductor
|
| 2SB819 |
Silicon PNP epitaxial planer type(For low-frequency output amplification) 1500 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| RN4911 |
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
|
Toshiba Semiconductor
|
| UNR9113J UNR9111J UNR911AJ UNR911DJ UN911EJ UNR911 |
Silicon PNP epitaxial planar type 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Composite Device - Transistors with built-in Resistor
|
Panasonic, Corp.
|
| 2SA1235 |
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE(mini type)
|
Isahaya Electronics Corporation
|
