| PART |
Description |
Maker |
| GT8G131 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SC4685 E000978 |
NPN EPITAXIAL TYPE (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
From old datasheet system
STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
| 2SA1160 E000473 |
From old datasheet system
STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
TRANSISTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC3072 E000784 |
From old datasheet system
TRANSISTOR (STROBE FLASH, MEDIUM POWER AMPLIFIER APPLICATIONS)
STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SA1327A 2SA1327A06 |
Strobe Flash Applications Audio Power Amplifier Applications
|
Toshiba Semiconductor
|
| GT8G13206 GT8G132 |
Strobe Flash Applications
|
Toshiba Semiconductor
|
| GT5G13106 |
Strobe Flash Applications
|
Toshiba Semiconductor
|
| GT8G10306 |
STROBE FLASH APPLICATIONS
|
Toshiba Semiconductor
|
| GT25G102 |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| GT25G102SM |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
