| PART |
Description |
Maker |
| S29GL064M90FCIR00 S29GL064M90BCIR82 S29GL064M90FAI |
256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 m MirrorBit Process Technology 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology 256,128,64,32.0兆伏安只页面模式闪存具有0.23レ米MirrorBit工艺技 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO56 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 ?? MirrorBit Process Technology
|
Spansion Inc. Spansion, Inc. SPANSION LLC
|
| S29GL128N90FAI010 S29GL128N90FAI012 S29GL128N90FAI |
3.0 VOLT-ONLY PAGE MODE FLASH MEMORY FEATURING 110 NM MIRRORBIT⒙ PROCESS TECHNOLOGY 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit⑩ Process Technology
|
SPANSION[SPANSION]
|
| AT49BV6416T-70TI AT49BV6416-70TU AT49BV6416-70TI |
64-megabit (4M x 16) Page Mode 2.7-volt Flash Memory
|
Atmel Corp.
|
| AT28BV64B-20SC AT28BV64B-20SI AT28BV64B-20TC AT28B |
64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection 64K EEPROM with 64-Byte Page & Software Protection, 2.7-Volt
|
Atmel
|
| S29GL064N11BAIV10 S29GL064N11FAIV12 S29GL064N11BFI |
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 64兆,32兆位3.0伏只页面模式闪存具有110纳米MirrorBit工艺技 64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
|
Spansion Inc. PROM Spansion, Inc. SPANSION LLC
|
| S29GL064A11TFIR20 S29GL064A11TFIR22 S29GL016A10FAI |
4M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 1M X 16 FLASH 3V PROM, 100 ns, PBGA64 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 100 ns, PDSO56 2M X 16 FLASH 3V PROM, 100 ns, PBGA56 4M X 16 FLASH 3V PROM, 90 ns, PBGA64 Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:48-TSOP; Memory Configuration:64K x 16; Memory Size:64MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes 4M X 16 FLASH 3V PROM, 90 ns, PDSO48 4M X 16 FLASH 3V PROM, 100 ns, PDSO48
|
Spansion, Inc. SPANSION LLC
|
| AM29PDL127H68VKI AM29PDL127H65VKIN AM29PDL127H68VK |
128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control 128兆位8米16位).0伏的CMOS只,页面模式同步写闪存与增强VersatileIO控制记忆 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control 8M X 16 FLASH 3V PROM, 65 ns, PBGA64 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control 8M X 16 FLASH 3V PROM, 55 ns, PBGA64 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control 8M X 16 FLASH 3V PROM, 85 ns, PBGA64 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control 8M X 16 FLASH 3V PROM, 55 ns, PBGA80 128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control 128兆位米16位).0伏的CMOS只,页面模式同步写闪存与增强VersatileIO控制记忆
|
Advanced Micro Devices Spansion, Inc. Spansion Inc.
|
| S29GL512P11TAI012 S29GL-P S29GL512P11TAI010 S29GL5 |
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
|
SPANSION[SPANSION]
|
| S29GL512P11TFIV12 |
3.0 Volt-only Page Mode Flash Memory featuring 90 nm MirrorBit Process Technology
|
SPANSION
|
| S70GL01GN00 S70GL01GN00FFI120 S70GL01GN00FFI122 S7 |
3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit Process Technology 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit?/a> Process Technology
|
SPANSION
|
| V53C832L30 |
HIGH PERFORMANCE 3.3 VOLT 256K X 32 EDO PAGE MODE CMOS DYNAMIC RAM
|
Mosel Vitelic, Corp.
|
|