| PART |
Description |
Maker |
| BFC17 |
4TH GENERATION MOSFET
|
Seme LAB
|
| BFC45 |
4TH GENERATION MOSFET
|
Seme LAB
|
| GT60N321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation
High Power Switching Applications The 4th Generation 高功率转换应用的第四
|
Toshiba, Corp.
|
| BFC46 |
4TH GENERATION MOSFET N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
Seme LAB
|
| DPX-S435 |
4th Generation Intel Core Gaming platform
|
Advantech Co., Ltd.
|
| USB2227 |
(USB2227 / USB2228) 4th Generation USB2.0 Flash Media Controller
|
SMSC Corporation
|
| USB2226 |
4th Generation USB 2.0 Flash Media Controller with Integrated Card Power FETs
|
SMSC Corporation
|
| USB2601 USB2602-NU-03 USB2601-NE-03 USB2601-NU-03 |
4TH GENERATION USB2.0 FLASH MEDIA CONTROLLER WITH INTEGRATED CARD POWER FETS AND HS HUB
|
SMSC[SMSC Corporation]
|
| GT60J322 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT
The 4th Generation Soft Switching Applications
|
TOSHIBA[Toshiba Semiconductor]
|
| PS22054 |
1200V/15A low-loss 4th generation IGBT inverter bridge for 3 phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| GT30J322 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS
|
TOSHIBA
|
| GT50J322 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS
|
TOSHIBA
|
