| PART |
Description |
Maker |
| V3.5MLA1206H23 V3.5MLA0805H V5.5MLA1206H V5.5MLA08 |
DIODE SUPPRESS SMD BAUFORM 1206 3.5V
DIODE SUPPRESS SMD BAUFORM 0805 3.5V
DIODE SUPPRESS SMD BAUFORM 1206 26V
DIODE SUPPRESS SMD BAUFORM 0805 14V
DIODE SUPPRESS SMD BAUFORM 0805 18V
DIODE SUPPRESS SMD BAUFORM 1206 56V 贴片二极管禁止BAUFORM 1206 56V
DIODE SUPPRESS SMD BAUFORM 1206 42V 二极管禁2V的贴片BAUFORM 1206
DIODE SUPPRESS SMD BAUFORM 0805 5.5V 贴片二极管禁止BAUFORM 08055.5V
|
Littelfuse, Inc.
AMIC Technology, Corp.
|
| PLTB450B |
Blaue Laser Diode 1.6 W in TO56 Bauform
|
OSRAM GmbH
|
| NX7663JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX7535BN-AA NX7535AN-AA |
LASER DIODE 1 550 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE WITH MONITOR PD FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX6352GP27-AZ NX6352GP33-AZ NX6352GP29-AZ |
LASER DIODE 1 270/1 290/1 310/1 330/1 350 nm AlGaInAs MQW-DFB LASER DIODE
|
California Eastern Labs
|
| NX6410GH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
| DL-3150-103 |
Infrared Laser Diode Compact Flat Package Type Laser Diode
|
SANYO
|
| NX8349XK NX8349YK NX8349TS |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
Renesas Electronics Corporation
|
| NX5522EH NX5522EK |
LASER DIODE 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE
|
Renesas Electronics Corporation
|
| DL-3147-041 |
Red Laser Diode Index Guided AlGaInP Laser Diode
|
SANYO
|
| DL-7140-201 |
Infrared Laser Diode High Power Laser Diode
|
SANYO
|
| M66510 M66510FP M66510P |
From old datasheet system
LASER-DIODE LASER-DIODE DRIVER
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
