| PART |
Description |
Maker |
| SMD0603P025TF SMD0603P020TF SMD0603P010TF SMD0603P |
These devices offer wide range in hold currents
|
Littelfuse
|
| SMD2016 SMD2016P030TF SMD2016P050TF SMD2016P100TF |
These devices offer a wide range of hold currents from 0.3 A to 2.0 A and voltages form 6 V to 60 V.
|
Littelfuse
|
| P2781A-B P2781-82-84 |
Wide Input Frequency Range Devices
From old datasheet system
|
ALSC
|
| IDT72T51543 IDT72T51543L5BB IDT72T51543L5BBI IDT72 |
2.5V MULTI-QUEUE FLOW-CONTROL DEVICES (32 QUEUES) 18 BIT WIDE CONFIGURATION
|
IDT[Integrated Device Technology]
|
| IDT72T51553 IDT72T51543 |
2.5V MULTI-QUEUE FLOW-CONTROL DEVICES (32 QUEUES) 18 BIT WIDE CONFIGURATION 2.5V的多队列流量控制器件2队列8位范围配
|
Integrated Device Technology, Inc.
|
| DSOX2APPBNDL DSOXT3APPBNDL |
Application Bundles Offer Big Savings
|
Keysight Technologies
|
| A1PCA000A103 |
The A01 and A02 series offer ranges of:pushbutton switches, illuminated or not
|
List of Unclassifed Manufacturers
|
| VF59415046.72M VF594SL15046.72M VF594L15046.72M VF |
Wide Frequency Range, Very Low Phase Jitter, Wide Pullability, Standard Footprint, Wide Operating Temperature, EMI Shielded 频率范围宽，非常低相位抖动，宽Pullability，标准足迹，宽工作温度，电磁屏蔽
|
ECM Electronics
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
|
| RKEF090 RKEF300 RKEF250 BBRF550 BBRF5501 RKEF500 R |
PolySwitch Resettable Devices Radial-leaded Devices
Overcurrent Protection Device
|
Tyco Electronics
http://
|
| LVR016K-2 LVR100S LVRL100 LVRL100S LVRL200S LVR005 |
PolySwitch Resettable Devices Line-Voltage-Rated Devices
|
Tyco Electronics
http://
|
| EPC1 |
Configuration Devices for ACEX, APEX, FLEX & Mercury Devices
|
Altera Corporation
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
