| PART |
Description |
Maker |
| CE81 |
Semicustom CMOS Embedded array
|
Fujitsu Component Limited.
Fujitsu Media Devices Limited
|
| MIC8021-0001 |
Semicustom High-Voltage Array Summary Information
|
Micrel Semiconductor
|
| UPD65530 UPD65510 UPD65565 UPD65567 UPD65507 |
ANACONDA LT TRANSCEIVER
CMOS Gate Array.Embedded Array Ver.2.0 for Package | Design Manual[05/2003] CMOS门阵列Array.Embedded的包版本2.0 |设计手册[05/2003]
|
TE Connectivity, Ltd.
Vishay Intertechnology, Inc.
|
| ATL35 |
Gate Array/Embedded Array-input NAND门阵嵌入式门阵列输入与非门）)
|
Atmel Corp.
|
| AM28F020A AM28F020A-120FCB AM28F020A-150FCB AM28F0 |
RES 562-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位56亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 70 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| PALCE16V8H-5SC PALCE16V8H-5SI PALCE16V8H-5SI4 PALC |
CAP 47PF 100V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
CAP 47PF 200V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR
EE CMOS Zero-Power 20-Pin Universal Programmable Array Logic
EE CMOS 20-Pin Universal Programmable Array Logic 电子工程的CMOS 20引脚通用可编程阵列逻辑
EE CMOS 20-Pin Universal Programmable Array Logic EE PLD, 20 ns, PDIP20
EE CMOS 20-Pin Universal Programmable Array Logic EE PLD, 25 ns, PQCC20
EE CMOS 20-Pin Universal Programmable Array Logic EE PLD, 25 ns, PDIP20
EE CMOS 20-Pin Universal Programmable Array Logic EE PLD, 15 ns, PQCC20
EE CMOS 20-Pin Universal Programmable Array Logic EE PLD, 15 ns, PDIP20
EE CMOS 20-Pin Universal Programmable Array Logic EE PLD, 20 ns, PQCC20
CAP 47PF 50V 5% NP0(C0G) SMD-1206 TR-7-PL SN-NIBAR 电子工程的CMOS 20引脚通用可编程阵列逻辑
CAP 47PF 100V 5% NP0(C0G) SMD-1206 SN-NIBAR SPECIAL PKG 电子工程的CMOS 20引脚通用可编程阵列逻辑
8 BIT MCU W/8K FLASH
|
Advanced Micro Devices, Inc.
Lattice Semiconductor, Corp.
ADVANCED MICRO DEVICES INC
|
| PALCE16V8H-5JC/5 PALCE16V8H-10PC/4 PALCE16V8H-15PC |
EE CMOS Zero-Power 20-Pin Universal Programmable Array Logic EE PLD, 25 ns, PQCC20
EE CMOS Zero-Power 20-Pin Universal Programmable Array Logic EE PLD, 25 ns, PDSO20
EE CMOS Zero-Power 20-Pin Universal Programmable Array Logic EE PLD, 25 ns, PDIP20
EE CMOS Zero-Power 20-Pin Universal Programmable Array Logic EE PLD, 15 ns, PQCC20
KPTC 3C 3#20 SKT PLUG EE PLD, 15 ns, PDIP20
EE CMOS Zero-Power 20-Pin Universal Programmable Array Logic EE PLD, 7.5 ns, PDSO20
EE CMOS Zero-Power 20-Pin Universal Programmable Array Logic EE PLD, 7.5 ns, PQCC20
EE CMOS Zero-Power 20-Pin Universal Programmable Array Logic EE PLD, 7.5 ns, PDIP20
KPT 5C 5#16 SKT RECP
KPTC 4C 4#20 PIN PLUG
KPT 4C 4#20 PIN PLUG
EE CMOS Zero-Power 20-Pin Universal Programmable Array Logic
|
Lattice Semiconductor, Corp.
Lattice Semiconductor Corporation
|
| AM28F512A AM28F512A-90PIB AM28F512A-120EC AM28F512 |
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt Bulk Erase Flash Memory with Embedded Algorithms
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms
|
AMD[Advanced Micro Devices]
|
| AM28F256A-120EC AM28F256A-120ECB AM28F256A-120EE A |
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
|
Advanced Micro Devices
|
| SM018 |
CMOS Gate Array
|
Crossmos
|
|
