| PART |
Description |
Maker |
| DSEP2X31-03A DSEP2X31-04A DSEP2X31-12A DSEP2X31-06 |
30 A, 300 V, SILICON, RECTIFIER DIODE MINIBLOC-4
30 A, 400 V, SILICON, RECTIFIER DIODE MINIBLOC-4
30 A, 1200 V, SILICON, RECTIFIER DIODE MINIBLOC-4
30 A, 600 V, SILICON, RECTIFIER DIODE MINIBLOC-4
60 A, 1200 V, SILICON, RECTIFIER DIODE MINIBLOC-4
HiPerFREDTM Epitaxial Diode with soft recovery 30 A, 300 V, SILICON, RECTIFIER DIODE, TO-220AC
Versatile Miniature Switch, High Performance
|
IXYS, Corp.
IXYS CORP
|
| KDZ2.0EV KDZ3.0EV KDZ4.7EV KDZ6.8EV KDZ4.3EV KDZ5. |
ZENER DIODE SILICON EPITAXIAL PLANAR DIODE(CONSTANT VOLTAGE REGULATION/ REFERENCE VOLTAGE)
ZENER DIODE SILICON EPITAXIAL PLANAR DIODE(CONSTANT VOLTAGE REGULATION, REFERENCE VOLTAGE)
surface mount silicon Zener diodes 硅表面贴装齐纳二极管
240 x 320 pixel format, White Edge LED backlight 稳压二极管外延硅平面二极管（恒压规例，参考电压）
40 Characters x 1 Lines, 5x7 Dot Matrix Character and Cursor 40 个字x 1 线5 x 7 点阵字符和光
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
KEC Holdings
http://
|
| DSEE15-06CC |
HiPerDynFRED Epitaxial Diode(正向电流15AB>HiPerDynFRED外延型二极管)
HiPerDynFRED Epitaxial Diode(正向电流15A的HiPerDynFRED外延型二极管) 15 A, 600 V, SILICON, RECTIFIER DIODE
|
IXYS Corporation
IXYS, Corp.
|
| KDZ16FV KDZ12FV KDZ15FV KDZ10FV KDZ6.2FV |
SILICON EPITAXIAL PLANAR DIODE
16.2 V, 0.1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
SILICON EPITAXIAL PLANAR DIODE
|
KEC(Korea Electronics)
|
| HVD142 |
Silicon Epitaxial Planar Pin Diode for High Frequency Switching
Silicon Epitaxial Planar Pin Diode for Antenna Switching
From old datasheet system
|
Hitachi Semiconductor
|
| MEK600-04DA |
HiPerFRED Epitaxial Diode dual diode, common cathode 880 A, 400 V, SILICON, RECTIFIER DIODE
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| SW08CXC300 SW12CXC300 SW58CXC620 SW42CXC680 SW30CX |
650 A, 800 V, SILICON, RECTIFIER DIODE
650 A, 1200 V, SILICON, RECTIFIER DIODE
1520 A, 5800 V, SILICON, RECTIFIER DIODE
1610 A, 4200 V, SILICON, RECTIFIER DIODE
5100 A, 3000 V, SILICON, RECTIFIER DIODE
5100 A, 3200 V, SILICON, RECTIFIER DIODE
1030 A, 3600 V, SILICON, RECTIFIER DIODE
2050 A, 2800 V, SILICON, RECTIFIER DIODE
1860 A, 4000 V, SILICON, RECTIFIER DIODE
|
WESTCODE SEMICONDUCTORS LTD
|
| MC981 |
Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V.
DIODE FOR HIGH SPEED SWICHING APPLICATION SILICON EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
| APT30D20SG APT30D20B APT30D20B_05 APT30D20BG APT30 |
30 A, 200 V, SILICON, RECTIFIER DIODE, TO-247
Fast Recovery Epitaxial Diode; Package: D3 [S]; IO (A): 30; VR (V): 200; trr (nsec): 21; VF (V): 1.1; Qrr (nC): 150; 30 A, 200 V, SILICON, RECTIFIER DIODE
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
|
Advanced Power Technolo...
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| KDV269E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(CATV TUNING)
|
KEC(Korea Electronics)
|
| KDV262E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(CATV TUNING)
|
KEC(Korea Electronics)
|
| KDV214E |
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(TV TUNING)
|
KEC[KEC(Korea Electronics)]
|
|
