| PART |
Description |
Maker |
| PS21964-AT PS21964-CT PS21964-T PS21964-TW |
600V/15A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| PS21963-ST |
600V/10A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion.
|
Mitsubishi Electric Semiconductor
|
| PS21963-S |
600V/10A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| PS21962-4 PS21962-4A PS21962-4C PS21962-4W PS21962 |
Dual-In-Line Package Intelligent Power Module
600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| PS21962-AT PS21962-CT PS21962-T PS21962-TW |
00V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| IKQ100N60TA |
600V low loss switching series third generation
|
Infineon Technologies A...
|
| APT6010JFLL |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 600V 47A 0.100 Ohm
|
Advanced Power Technology
|
| APT6017JLL |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 600V 31A 0.170 Ohm
|
Advanced Power Technology
|
| APT6017B2LL APT6017LLL |
POWER MOS 7 600V 35A 0.170 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology
|
| APT6021BLL APT6021SLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
POWER MOS 7 600V 29A 0.210 Ohm
|
Advanced Power Technology, Ltd.
|
| APT6013JLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
POWER MOS 7 600V 39A 0.130 Ohm
|
Advanced Power Technology, Ltd.
|
