| PART |
Description |
Maker |
| EM640FR16DW-10L EM640FS16DW-10L EM641FR16DW-10L EM |
128K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
http://
Emerging Memory & Logic Solutions Inc
Emerging Memory & Logic...
|
| EM613FP16AS-70LF EM643FP16AS-70LF EM613FP16AS-70LL |
128K x16 bit Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc
Emerging Memory & Logic...
|
| K6F4016U4G |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung semiconductor
|
| EM640FU16E |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions
|
| K6F1616T6C-FF55 K6F1616T6C K6F1616T6C-F K6F1616T6C |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM 100万x16位超低功耗和低电压的CMOS静态RAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HY62SF16404E-SF HY62SF16404E-SFI HY62SF16404E-DF H |
256K x16 bit 1.65 ~ 2.3V Super Low Power FCMOS Slow SRAM
|
Hynix Semiconductor
|
| HY62UF16404D |
x16|3V|55/70|Super Low Power Slow SRAM - 4M x16 | 3V的| 55/70 |超级低功耗SRAM的速度 4
|
GE Security, Inc.
|
| KM68FS1000Z |
128Kx8 Bit Super Low Power and Low Voltage Full CMOS SRAM(128K x 8位超低功耗和低电压CMOS 静RAM) 128Kx8位超级低功耗和低电压的CMOS SRAM的全部（128K的8位超低功耗和低电压的CMOS静态RAM）的
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K6F8016V3A K6F8016V3A-F K6F8016V3A-TF55 K6F8016V3A |
512K X 16 STANDARD SRAM, 55 ns, PDSO44
From old datasheet system
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| DSK6F8016U6B K6F8016U6 DS_K6F8016U6B |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG[Samsung semiconductor]
SAMSUNG [Samsung semiconductor]
Samsung Electronic
|
